Effect of copolymer composition on acid-catalyzed deprotection reaction kinetics in model photoresists

Kang, Shuhui; Prabhu, Vivek M.; Vogt, Bryan D.; Lin, Eric K.; Wu, Wen Li; Turnquest, Karen

doi:10.1016/j.polymer.2006.07.003

Cited by 38 publications

(80 citation statements)

References 30 publications

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“…The photacid trapping mechanism has been discussed in our previous work [6][7][8][9] . The photoacids could be trapped by the reaction products through strong hydrogen bonding interactions.…”

Section: Reaction-diffusion Modeling and Methodologymentioning

confidence: 99%

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A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists

Kang

Lavery

Choi

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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It has been recently postulated that sub-22 nm photolithography with polymeric photoresists has reached a materials design barrier due to its large molecular mass and distribution. In this argument, the "pixel" size, which is related to the smallest molecular unit, determines the feature fidelity and resolution of the lithographic process. This hypothesis remains unproven, but molecular glass photoresists can provide a test because they can share similar chemical functionality to polymer resists, but with low molecular mass and a monodisperse molecular mass distribution. The low molecular mass leads to the smaller pixel size compared to the radius of gyration of the polymer photoresist. In this work, we compare the deprotection reaction-diffusion kinetics of a common photoacid generator in a polymer and molecular glass resist with similar resist chemistry to elucidate effects of molecular architecture on photoresist performance. We determine the mechanism of reaction, photoacid trapping behavior, and diffusivity by measuring and comparing the reaction kinetics parameters as a function of temperature and exposure dose. These results permit an analysis of the latent image formation which is a crucial factor in resolution and line-edge roughness. Further, knowledge of the reaction-diffusion parameters of each type of resist provides a quantitative approach to predict linespace features, crucial for design for resolution-enhancement features.

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Section: Reaction-diffusion Modeling and Methodologymentioning

confidence: 99%

“…The details of the modeling approach used are discussed elsewhere, but we provide a brief summary 6,7 . There are three mains parts in this kinetics model.…”

Section: Reaction-diffusion Modeling and Methodologymentioning

confidence: 99%

A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists

Kang

Lavery

Choi

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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“…We neglect the effect of the residual MA to simplify the modeling calculations. Previously determined rate constants [ 44 ] ( k P , k T ) from single-layer experiments were used to determine the photoacid diffusion coeffi cient through the PMAdMA by fi tting the deprotection profi les for the bilayers using TPS-PFBS. Unlike the case of PHOSt, we fi nd that the photoacid trapping does not need to be modeled as a reversible reaction to describe the data.…”

Section: Reaction-diffusion Frontsmentioning

confidence: 99%

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

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Photoresist materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes. As next-generation light sources are developed, using extreme ultraviolet light of wavelength 13.5 nm, these highly tuned formulations must meet strict image-fidelity criteria to maintain the expected performance gains from decreases in feature size. However, polymer photoresists appear to be reaching resolution limits and advancements in measurements of the in situ formed solid/solid and solid/liquid interface is necessary. This Review focuses on the chemical and physical structure of chemically amplified photoresists at the lithographic feature edge at length scales between 1 nm and 100 nm. Neutron reflectivity measurements provide insight into the nanometer-scale composition profiling of the chemical latent image at an ideal lithographic line-edge that separates optical resolution effects from materials processing effects. Four generations of advanced photoresist formulations were examined over the course of seven years to quantify photoresist/photoacid and photoresist/developer interactions on the fidelity of lithographic features. The outcome of these measurements complement traditional resist design criteria by providing the effects of the impacts of the photoresist and processing on the feature fidelity. These physical relations are also described in the context of novel resist architectures under consideration for next-generation photolithography with extreme-ultraviolet radiation.

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“…The nature of the polymer significantly contributes to all aspects of resist characteristics and performance. Most of the polymers used as resists are linear copolymers or terpolymers synthesized by the free radical polymerization technique (Ito, 2005;Kang et al, 2006). Such technique has the advantage to be relatively simple but the main drawback is a limited control of the polymer chain structure.…”

Section: Chemically Amplified Photoresists For Applications In Microementioning

confidence: 99%

DUV Interferometry for Micro and Nanopatterned Surfaces

Soppera¹,

Dirani²,

Stehlin³

et al. 2011

Recent Advances in Nanofabrication Techniques and Applications

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Effect of copolymer composition on acid-catalyzed deprotection reaction kinetics in model photoresists

Cited by 38 publications

References 30 publications

A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists

A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

DUV Interferometry for Micro and Nanopatterned Surfaces

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