Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

Zegrya, G. G.; Ulin, V. P.; Zegrya, A. G.; Ulin, N. V.; Mikhailov, Yu. M.

doi:10.1134/s1063784219100268

Cited by 6 publications

(2 citation statements)

References 13 publications

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“…Pore formation in silicon during anodic etching is related to anodic polarization in aqueous HF solution and depends on the electrode potential and HF concentration. Various mechanisms of the formation of porous layers are described in the literature [17][18][19][20][21]. Figures 3 and 4 show the results of the formation of nanoporous layers on silicon wafers of n-type and p-type conductivity, with the same resistivity v = 0.002 Ω cm, orientation of the surface of the plates (100).…”

Section: Nanostructured Layers Based On Heavily Doped Siliconmentioning

confidence: 99%

Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

et al. 2022

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This review presents the results of the local formation of nanostructured porous silicon (NPSi) on the surface of silicon wafers by anodic etching using a durite intermediate ring. The morphological and crystallographic features of NPSi structures formed on n- and p-type silicon with low and relatively high resistivity have also been investigated. The proposed scheme allows one to experiment with biological objects (for example, stem cells, neurons, and other objects) in a locally formed porous structure located in close proximity to the electronic periphery of sensor devices on a silicon wafer.

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Section: Nanostructured Layers Based On Heavily Doped Siliconmentioning

confidence: 99%

Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

et al. 2022

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“…Tang D. and co-authors showed that porosity of cathode diffusion layer has a significant effect on the oxygen mass transfer and removal of liquid water in direct ethanol fuel cell [15]. The porosity and specific surface area of porous silicon depend on a few parameters: the type of conductivity and resistivity of the silicon wafer [16,17], the composition and temperature of the electrolyte for etching [18,19], the illumination of the reaction zone [20,21] and metal composition deposed on Si [22]. The influence of these parameters is intensively studied.…”

Section: Introductionmentioning

confidence: 99%

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Volovlikova¹,

Shilyaeva²,

Silakov³

et al. 2022

Nanotechnology

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In this paper, we are reporting on the fabrication of a porous silicon/Au and silicon filament/Au using the two-step Au-assisted chemical etching of p-type Si with a specific resistivity of 0.01, 1, and 12 Ω·cm when varying the Au deposition times. The structure analysis results show that with an increasing Au deposition time of up to 7 min, the thickness of the porous Si layer increases for the same etching duration (60 min), and the morphology of the layer changes from porous to filamentary. This paper shows that the uniform macro-porous layers with a thickness of 125.5–171.2 μm and a specific surface area of the mesopore sidewalls of 142.5–182 m2·g−1 are formed on the Si with a specific resistivity of 0.01 Ω·cm. The gradient macro-porous layers with a thickness of 220–260 μm and 210–290 μm, the specific surface area of the mesopore sidewalls of 3.7–21.7 m2·g−1 and 17–29 m2·g−1 are formed on the silicon with a specific resistivity of 1 and 12 Ω·cm, respectively. The por-Si/Au has excellent low-temperature electro oxidation performance with ethanol, the activity of ethanol oxidation is mainly due to the synergistic effect of the Au nanoparticles and porous Si. The formation mechanism of the uniform and gradient macro-porous layers and ethanol electro-oxidation on the porous/filament silicon, decorated with Au nanoparticles, was established. The por-Si/Au structures with perpendicularly oriented pores, a high por-Si layer thickness, and a low mono-Si layer thickness (with a specific resistivity of 1 Ω·cm) are optimal for an effective ethanol electro-oxidation, which has been confirmed with chronoamperometry measurements.

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Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces

Suchikova,

Bohdanov,

Kovachov

et al. 2023

Appl Nanosci

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Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

Cited by 6 publications

References 13 publications

Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces

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