Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device

Abstract

The formation and disruption of conducting filament (CF) are responsible for the SET/RESET switching of resistive random access memory (ReRAM). The ReRAM enters into a low resistive state soon after the complete formation of CF and the process is followed by the radial growth of CF during the ON-state. The present investigation aims to develop a numerical and analytical model to realize the effect of CF radius on local temperature rise and activation power, combining the thermal reaction model (TRM) and power signature model. The numerical investigation is carried out using finite element method to obtain the local temperature rise and temperature distribution across the device. The numerical results show a similar increment pattern of local temperature as of analytical TRM i.e. the local temperature increases linearly with a rapid growth rate of ∼63% in initial CF radii and then gradually attains a steady-state temperature with ∼10% increment in higher CF radii. The relationship between resistance and compliance current is calculated which obeys the same reported trend in other switching oxides like TiO X , CuO, NiO. Additionally, the activation power is determined where the resistance decreases (101.87-0.25 KΩ) due to the CF radial growth, which results in four orders of exponential increment in activation power from ∼0.04 µW to 500 ± 100 µW. The power signature of numerical TRM is validated with that analytical TRM where the device attends a steady-state temperature after a certain CF radius (>25 nm) along with the activation power.

Exploring the Physical Properties Related to Resistive Switching Events in HfO2-Based RRAM Devices with an Analytical Framework

“…Figure 5(a) illustrates the complete voltage sweep as a function of time, whereas Figure 5(b) demonstrates the calculated local temperature on a time scale, with a maximum local temperature of 729 K in the positive bias domain and 400 K in the negative bias domain, consistent with the reported work 52. …”

“…The obtained T max , above the critical temperature T Crit = 600 K for the HfO 2 RRAM device, is adequate to contribute to resistive switching Figure (a) illustrates the complete voltage sweep as a function of time, whereas Figure (b) demonstrates the calculated local temperature on a time scale, with a maximum local temperature of 729 K in the positive bias domain and 400 K in the negative bias domain, consistent with the reported work …”

“…The continued filament shrinking leads to filament dissolution, where the device enters into an HRS. During this negative V a domain, a small temperature rise (∼400 K) is observed in Figure (b), agreeing well with the reported work . The vanishing of the filament lowers the local temperature to room temperature at the end of the voltage sweep ( V a = 0).…”

“…During this negative V a domain, a small temperature rise (∼400 K) is observed in Figure 5(b), agreeing well with the reported work. 52 The vanishing of the filament lowers the local temperature to room temperature at the end of the voltage sweep (V a = 0). In this study, the device with an oxide thickness of 100 nm (same thickness as in the fabricated device) is simulated, where the V SET and V RESET are consistent with the experimental data.…”

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

“…In this case, the R HRS / R LRS ratio increased from 292.7 ± 94.6 to 2307.8 ± 166.4 with an increase in film thickness from 7.2 ± 2.5 nm to 41.2 ± 9.7 nm and decreased from 2307.8 ± 166.4 to 2154.7 ± 313.3 with an increase in film thickness from 41.2 ± 9.7 nm to 53.6 ± 18.3 nm ( Figure 6 b). One of the probable reasons for the increase in resistance of R HRS is an increase in the length of the nanoscale conduction channel gap ( h gap ) with an increase in the thickness of the forming-free nanocrystalline ZnO film, which is correlated with [ 73 , 74 , 75 ].…”