Effect of Composition in Transparent Conducting Indium Zinc Tin Oxide Thin Films Deposited by RF Magnetron Sputtering

Damisih,; Chan, Hong; Finanda, Ferdyano; Kim, Jeong-Joo; Lee, Hee Young

doi:10.1166/jno.2012.1388

Cited by 2 publications

(4 citation statements)

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“…Spin coating [16,17] and magnetron sputtering [18,19] are the most widely used technologies for the fabrication of ITZO thin films. Of the various magnetron sputtering methods, high-power impulse magnetron sputtering (HiPIMS) is superior for the preparation of oxide films [20][21][22] due to its higher ionization degree of the sputtered species [23,24].…”

Section: Introductionmentioning

confidence: 99%

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Chen

Huo

et al. 2019

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In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different sputtering powers. With the sputtering power increasing from 100 W to 400 W, the film’s crystallinity was enhanced. When the sputtering power was 400 W, an In2O3 (104) plane could be detected. Films with optimal electrical properties were produced at a sputtering power of 300 W, a carrier mobility of 31.25 cm2·V−1·s−1, a carrier concentration of 9.11 × 1018 cm−3, and a resistivity of 2.19 × 10−4 Ω·m.

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Section: Introductionmentioning

confidence: 99%

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Chen

Huo

et al. 2019

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“…So-called "Tauc plot" [28], meaning dependence of (αE) 2 , where α = 4πk/λ and λ is wavelength on photon energy E, was constructed in order to determine the direct optical bandgap energy of non-stoichiometric IZTO samples and is depicted in Figure 4. The linear part of this dependence was used to estimate the optical bandgap (see lines in Figure 4).…”

Section: Determination Of Optical Bandgapmentioning

confidence: 99%

“…For utilization in flat panel displays, transparent conductive oxides have been used for many years due to their low resistivity and high transparency in the visible spectrum (e.g., References [ 1 , 2 , 3 ]). Indium tin oxide (ITO) is used most widely for transparent conducting films because of its low resistivity (~1 × 10 −4 Ω⋅cm), high optical transmittance ~85%, and wide optical bandgap of approximately 3 eV (e.g., References [ 4 , 5 , 6 ]).…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

et al. 2021

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A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2–6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss–Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology.

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Effect of Composition in Transparent Conducting Indium Zinc Tin Oxide Thin Films Deposited by RF Magnetron Sputtering

Cited by 2 publications

References 0 publications

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

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