Effect of composition and deposition parameters on optical properties of Ge25Sb15−xBixS60 thin films

El-Samanoudy, M. M.

doi:10.1016/s0040-6090(02)01042-8

Cited by 26 publications

(6 citation statements)

References 30 publications

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“…This effect causes changes in bond angles and/or bond lengths [16]. The same observation was found by M. M. El-Samanoudy for replacement of Sb atoms by Bi atoms in case of Ge25Sb15-xBixS60thin films [17].…”

Section: Figure 2 Evolution Of the Mode Of Transition From The Variat...supporting

confidence: 62%

Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique

Patil¹

2023

Int. J. Sci. Res. Arch.

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Antimony bismuth selenide thin films (Sb2-xBixSe3), with x varying from 0.00 to 0.10, have been deposited on glass substrate using the arrested precipitation technique (APT). The preparative parameters such as temperature, concentration, and pH have been optimized in order to deposit Sb2-xBixSe3 thin films. The as-deposited Sb2-xBixSe3 thin films are specularly reflective and orange in colour. The films were characterized by optical absorption, x-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive x-ray analysis (EDS) studies. An analysis of the optical absorption data of the as-deposited films revealed an indirect transition with the estimation of the corresponding band gap value.

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Section: Figure 2 Evolution Of the Mode Of Transition From The Variat...supporting

confidence: 62%

Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique

Patil¹

2023

Int. J. Sci. Res. Arch.

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“…In such systems, the degree of chemical order has a considerable effect on the optical energy gap. The chemical order and structured features [5][6][7]. However the observed variation in the tailing parameter (B À1 ) reflects the structural changes in the amorphous thin films deposited on different substrates.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Thin films deposited under different conditions produce different results [5], depending on thin film deposition methods (vacuum evaporation, chemical bath deposition, radio frequency, laser sputtering, etc.) or parameters (thickness of film, type of substrate, substrate temperature, etc.).…”

Section: Introductionmentioning

confidence: 99%

“…Three types of different substrates (microscope glass, quartz and mica) are used for the thin film depositions. Unfortunately there are very few reports [5][6][7] available on the properties of films depending on types of substrate. The effect of thickness on optical properties of Se-Te-Ag thin films is also available in literature [8,9], so a detailed analysis of the effect of substrate type is reported here for the optical properties of Se 92 Te 4 Ag 4 films.…”

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confidence: 99%

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Effect of different substrate on optical properties of Se₉₂Te₄Ag₄ films

2013

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Present work reports the effect of substrate on the optical properties of Se 92 Te 4 Ag 4 thin films. Thin films of thickness 2500 Å were prepared by the thermal evaporation of the bulk samples. Amorphous nature of thin films is confirmed by the X-ray diffraction spectra. The transmittance spectra of Se 92 Te 4 Ag 4 thin films were obtained in the spectral region in the range 300-1100 nm. The optical band gap (E g ) and extinction coefficient (k) has been calculated from the absorbance data. The value of refractive index (n) has been determined from Swanepoel's method. The band gap of the film deposited on mica substrate (1.24 eV) is smallest as compared to the band gap of the films deposited on microscopic glass (1.29 eV) and quartz (1.26 eV). The change in value of optical parameters with change in substrate is explained in terms of disorder and defects, which confirms the dependence of optical parameters on types of substrates. IntroductionThin films of chalcogenide glasses have attracted significant attention because of their interesting physical, electrical and optical properties as well as their potential application in optoelectronics and thermoelectric device fabrication [1][2][3][4]. Thin films deposited under different conditions produce different results [5], depending on thin film deposition methods (vacuum evaporation, chemical bath deposition, radio frequency, laser sputtering, etc.) or parameters (thickness of film, type of substrate, substrate temperature, etc.). There are various deposition parameters, such as thickness, substrate temperature, type of substrate and deposition rate, on which properties of films may depend. A wide range of deposition parameters make it possible to prepare a semiconductor with specific properties required for certain applications, and hence the performance of certain devices, which could not be achieved otherwise with a simple elemental or compound semiconductor, may be achieved using different deposition conditions. The present study is centered over the effect of substrate types on the structural and optical properties of thermally evaporated Se 92 Te 4 Ag 4 thin films. Three types of different substrates (microscope glass, quartz and mica) are used for the thin film depositions. Unfortunately there are very few reports [5][6][7] available on the properties of films depending on types of substrate. The effect of thickness on optical properties of Se-Te-Ag thin films is also available in literature [8,9], so a detailed analysis of the effect of substrate type is reported here for the optical properties of Se 92 Te 4 Ag 4 films. The envelope method was used for the calculations of refractive index and absorption coefficient by analyzing transmission spectra [10], whereas Tauc's extrapolation was employed for optical energy gap

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“…Replacing Se with Bi results in a decrease in the optical band interval and increases the transmission property on the mid-IR region of the Ge-Se system. 42 Considering the In 25Àx Bi x Se 75 (x ¼ 0, 1, 3, 5, 7) system, it has been seen that for higher concentration (x > 7) of Bi leads to the appearance of the Bi 2 Se 3 phase in the annealed lms. The temperature dependence study of dc electrical conductivity revealed the observation of hopping conduction at x ¼ 3% of Bi content, while the observation of signicant change at x > 5 that due to extended state conduction with the increase in the doping concentration.…”

Section: Bismuth Doped Chalcogenide Thin Lmsmentioning

confidence: 99%

A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

Priyadarshini¹,

Das²,

Naik³

2022

RSC Adv.

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Effect of composition and deposition parameters on optical properties of Ge25Sb15−xBixS60 thin films

Cited by 26 publications

References 30 publications

Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique

Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique

Effect of different substrate on optical properties of Se₉₂Te₄Ag₄ films

A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

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Effect of composition and deposition parameters on optical properties of Ge25Sb15−xBixS60 thin films

Cited by 26 publications

References 30 publications

Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique

Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique

Effect of different substrate on optical properties of Se92Te4Ag4 films

A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

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Effect of different substrate on optical properties of Se₉₂Te₄Ag₄ films