Effect of complexing agent on the chemically deposited ZnS thin film

Londhe, Priyanka U.; Rohom, Ashwini B.; Bhand, Ganesh R.; Jadhav, Smita; Lakhe, Manorama G.; Chaure, Nandu B.

doi:10.1007/s10854-016-6177-7

Cited by 7 publications

(3 citation statements)

References 30 publications

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“…A typical XRD analysis for both as-deposited and heat treated ZnS at 300˚C for 10 minutes is shown in Figure 3 The amorphisation of the crystalline ZnS grown at 1430 mV might be due to high defect concentration [13], elemental composition, oxidation, and the sublimation of the layer leading to the degradation of the ZnS layer. The crystallite size was calculated using the Scherrer's formula (see equation 2), where θ is the Bragg angle, β is the full-width-at-half-maximum (FWHM) of the diffraction intensity in radians and λ is the wavelength of the X-rays used (1.54 Å) and the XRD data is summarised in [9,11,12] with improvement in the ZnS layer crystallinity with the increasing complexing agent concentration [24]. 70 eV bandgap norm has also been observed for layer grown from other techniques such as chemical bath deposition (CBD) [35] and metal organic vapour phase epitaxy (MOVPE) [36] amongst others.…”

Section: Structural Analysismentioning

confidence: 99%

“…(a) and Figure 3 (b) respectively. As observed in Figure 3 (a), ZnS layers grown at cathodic voltages outside the range of 1410 to 1430 mV show an amorphousbehaviour which might be as a result of the growth technique, the cathodic voltage and the ensuing elemental composition[22], temperature of growth[23], and the absence of binding/complexing agent in the electrolytic bath[24]. For the ZnS layers grown at 1430 mV,peaks associable with ZnS(111)C, ZnS(110)H and ZnS(220)C were observed at 2θ=~29.2˚, ~47.5˚ and ~48.2˚ [25] respectively.…”

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confidence: 94%

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The influence of ZnS crystallinity on all-electroplated ZnS/CdS/CdTe graded bandgap device properties

Ojo

Salim

Dharmadasa

2018

J Mater Sci: Mater Electron

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Electrodeposition of zinc sulphide (ZnS) was achieved from electrolytic bath containing zinc sulphate monohydrate (ZnSO4•H2O) and ammonium thiosulphate ((NH4)2S2O3) in a twoelectrode electroplating configuration. The cyclic voltammetric studies show that ZnS layers can be electroplated between (1350 and 1550) mV. The grown layers were characteristically explored for their structural, optical, morphological and electronic properties using X-ray diffraction (XRD) and Raman spectroscopy, UV-Visible spectrophotometry, scanning electron microscopy (SEM), photoelectrochemical (PEC) cell and DC conductivity measurements respectively. The structural analysis shows that crystalline ZnS can be deposited within a narrow cathodic deposition range between (1420 and 1430) mV. The UV-Visible spectrophotometry shows that the bandgap of both as-deposited and heat-treated ZnS films are in the range of ~(3.70 and 3.90) eV. The SEM shows small grains depicting the wetting property of ZnS. The PEC results show that the electroplated ZnS below 1425 mV is p-type and above 1425 mV is n-type under both as-deposited and heat treated condition. The DC conductivity shows that the highest resistivity is at the inversion growth voltage (Vi) for the ZnS layers. The glass/FTO/n-ZnS/n-CdS/n-CdTe/Au devices were fabricated using crystalline-ZnS and amorphous-ZnS buffer layers. The devices were explored using currentvoltage (I-V) and capacitance-voltage (C-V) techniques. As expected, devices fabricated with c-ZnS show improved device parameters (ideality factor n=1.60, depletion width W=1092 nm, open-circuit voltage Voc=730 mV, short-circuit current density Jsc=34.1 mAcm-2 , fill factor FF=0.57, conversion efficiency η=14.2%) when compared to device parameters (n=1.85, W=900 nm, Voc=720 mV, Jsc=29.9 mAcm-2 , FF=0.52, η=11.2%) of these devices fabricated with a-ZnS buffer layers.

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Section: Structural Analysismentioning

confidence: 99%

mentioning

confidence: 94%

The influence of ZnS crystallinity on all-electroplated ZnS/CdS/CdTe graded bandgap device properties

Ojo

Salim

Dharmadasa

2018

J Mater Sci: Mater Electron

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“…To avoid precipitation, it is necessary to use a complexing agent in the growth solution. In the CBD technique, the complexing agent is mainly responsible for reducing the amount of free Zn 2+ ions, through the formation of complex species that prevent the growth of hydroxides and provide the fast precipitation of the ZnS [20,21].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterisation of ZnS thin films obtained without complexing agent by the chemical bath technique

González-Chan

Pat-Herrera

Trejo-Ramos

et al. 2021

Surface Engineering

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Zinc sulphide (ZnS) thin films were synthesised by chemical bath deposition technique without using complexing agent. A physicochemical study was realized on the growth solution composed of ZnCl 2 , KOH, and SC(NH 2 ) 2 . The bath solution was at 60°C and pH values of 11.5, 12, and 12.5 were selected for growing the material. The species distribution diagrams, and solubility curves show that the growth mechanism requires the presence of zinchydroxide ions, and alkaline pH for growing the ZnS. The physicochemical properties of the samples improve as the pH of the solution increases. Samples deposited at pH=12.5 present a cubic structure (sphalerite) and bandgap energy of 3.72 eV, consistent with bulk-ZnS. For comparison, additional chemical baths were prepared by using NH3 as complexing agent; however, the properties of those samples result inferior. This methodology was validated by depositing ZnS films at 40°C without the complexing agent, obtaining similar results.

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Thin Films of Wide Band Gap II-VI Semiconductor Compounds: Features of Preparation

Марков

Маскаева

2023

Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

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Effect of complexing agent on the chemically deposited ZnS thin film

Cited by 7 publications

References 30 publications

The influence of ZnS crystallinity on all-electroplated ZnS/CdS/CdTe graded bandgap device properties

The influence of ZnS crystallinity on all-electroplated ZnS/CdS/CdTe graded bandgap device properties

Synthesis and characterisation of ZnS thin films obtained without complexing agent by the chemical bath technique

Thin Films of Wide Band Gap II-VI Semiconductor Compounds: Features of Preparation

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