Effect of cold deformation on the corrosion behaviour of UNS S31803 duplex stainless steel in simulated concrete pore solution

Feasibility of utilizing 2304 duplex stainless steel rebar in seawater concrete: Passivation and corrosion behavior of steel rebar in simulated concrete environments

“…As shown in Figure , the passive films on 2304 duplex stainless steel exhibited an alternant p–n heterojunction behavior. Similar experimental results have been reported in previous studies for different kinds of stainless steel, reflecting the duplex character of the films, where the main products in the film are chromium and iron oxides for p‐type and n‐type semiconductor, respectively. Table shows the N D , N A , and E fb values calculated from the M–S plots (Figure ), where E fb is pH dependent .…”

“…Similar experimental results have been reported in previous studies for different kinds of stainless steel, reflecting the duplex character of the films, where the main products in the film are chromium and iron oxides for p‐type and n‐type semiconductor, respectively. Table shows the N D , N A , and E fb values calculated from the M–S plots (Figure ), where E fb is pH dependent . We obtained the most negative value of E fb in solutions with a pH of 12.5 but reversed it in solutions with a pH of 9 compared with that in solutions with a pH of 11.…”

“…As shown in Table , the observed values of N D and N A were in the range of 10 20 –10 21 cm −3 , meaning the films were highly disordered . We obtained the largest values of both N D and N A in solutions with a pH of 9, indicating that the prepassive film was much more susceptible to chloride ion erosion when the pH was down to 9, which is consistent with the EIS results as shown in Figure , where a higher carrier concentration is a strong manifestation of a more heterogeneous and disordered film …”

“…The positive and negative signs represent n‐type and p‐type semiconductors, respectively. Parameter is the carrier concentration and is the donor density ( N d ) for an n‐type semiconductor and acceptor density ( N a ) for a p‐type semiconductor, is the dielectric constant of the sample (12 in this study), the vacuum permittivity (8.85 = 10 −14 F/cm), e is the electronic charge (1.602 = 10 −19 C), the flat‐band potential, k is the Boltzmann constant (1.38 = 10 −23 J/K), and T is the absolute temperature.…”

Коррозионное растрескивание под напряжением металлов и сплавов в агрессивных H-=SUB=-2-=/SUB=-S-CO-=SUB=-2-=/SUB=--Cl-=SUP=---=/SUP=- средах

“…Коррозионное поведение, в том числе и питтинговая коррозия дуплексных сталей зависят от термообработки, микроструктуры, степени легирования, степени деформации [42][43][44][45][46][47][48] и т. д. Дуплексные стали отжигаются в области температур 600−1200 • C; во время отжига меняется соотношение α : γ-фаз и, кроме того, фазы обогащаются разными элементами. Cr и Mo обогащают ферритную α-фазу, а Ni, Mn и N -аустенитную γ-фазу, что сказывается как на общую, так и на локализованную коррозию [49].…”