Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN

Abstract

Temperature dependent thermopower and Hall effect measurements, combined with model calculations including all of the relevant elastic and inelastic scattering mechanisms, are used to quantify the role of charged line defects on electron transport in n-type InN films grown by molecular beam epitaxy. Films with electron concentrations between 4 × 10 17 to 5 × 10 19 cm −3 were investigated. Charged point and line defect scattering produce qualitatively different temperature dependences of the thermopower and mobility, allowing their relative contribution to the scattering to be evaluated using charge neutrality at the measured electron concentration. Both charge state possibilities for the dislocations, that is, positively charged (donors) or negatively charged (acceptors), were considered. The 100-300 K temperature dependence of the mobility and the 200-320 K temperature dependence of the thermopower can be modeled well with either assumption. The dislocation density was independently measured by plan-view and cross-sectional transmission electron microscopy and corresponds well with the values obtained from transport modeling.

Carrier dynamics and related electronic band properties of InN films

“…They found that the electrons are mainly scattered by charged dislocations. 61) The advantage of polarized IR analysis becomes apparent in the study of the scattering anisotropy of carriers. Figure 8(b) shows the broadening anisotropy of the LOPC+ mode.…”

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

“…TD cores consist of point defect complexes (e.g., impurities or vacancies) that have abundant dangling bonds, which form deep acceptors with a space-charge double Schottky barrier around dislocation lines; these acceptor-like negatively charged TDs generate an effective potential field that induces scattering of electrons by Coulombic interactions 4,5 . This "charged TD scattering" severely reduces the number of free charge carriers and thus diminishes electron mobility (μ e ) in epitaxial semiconductor films (e.g., GaAs 4 , InN 6 , GaN 3,7 ). Therefore, the control of charged TD scattering is a key requirement for achieving heteroepitaxial semiconductor films with an electronic grade if homoepitaxy is not available 3,8,9 .…”

Особенности спектров фотовозбуждения эпитаксиальных слоев InN, выращенных методом молекулярно-пучковой эпитаксии с плазменной активацией азота

“…Рост пленки InN проходил в азотобогащенных условиях при соотношении потоков элементов III и V групп ∼ 0.8, при этом поток индия на подложку составлял ∼ 0.4 мкм/ч. В образцах 55 и 61 для роста пленок InN применялся метод эпитаксии с модуляцией потока металла (metal-modulated epitaxy, MME), суть которого состоит в попеременном росте в индийобогащенных условиях роста и выдержке поверхности роста под потоком азота [15,16]. Во время подачи потока In на подложку возникают металлобогащенные условия роста, способствующие поверхностной диффузии адатомов.…”