Effect of charge carrier–phonon coupling on the energy of shallow donors in CdSe quantum dots

Abstract

The effects of low electric field and finite-barrier height on the ground state energy of a donor impurity confined in a polar CdSe spherical quantum dot embedded in a non-polar matrix were studied. Calculations were carried out in the framework of the effective mass approximation using the Hassé variational approach. The effect of the quantum confinement was described by a finite deep potential taking into account the interactions between the charge carriers (electron and ion) and the confined longitudinal optical phonons (LO-phonons). It was found that the binding energy and the polarizability depend strongly on LO-phonon effects. So, the phonon corrections should not be ignored or neglected whatever the dot size and the degree of confinement.

Size dependence of the polarizability and Haynes rule for an exciton bound to an ionized donor in a single spherical quantum dot

“…The electric field effect on the low dimension semiconductors continues to attract much interest. [13][14][15][16][17][18][19][20][21] It leads to the quantum confined Stark effect characterized by a red-shift, many times greater than the electron-hole binding energy.…”