Effect of Channel Engineering on Quasi-Static Capacitance-Voltage Characteristics of Double-Gate MOSFET

Sanjay,; Prasad, B.; Vohra, Anil

doi:10.1007/s11664-020-08307-3

Cited by 1 publication

(1 citation statement)

References 27 publications

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“…The absence of any electrical anomalies further strengthens the confidence in the high electrical properties of the MIS capacitor with SiGe/SiO 2 core/shell NCs. These findings emphasize the device’s reliability and suitability for various electronic applications, confirming its robust performance and demonstrating its potential for integration into advanced electronic systems. − …”

Section: Resultsmentioning

confidence: 60%

Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators

Aouassa,

Bouabdellaoui,

Pessoa

et al. 2024

ACS Appl. Electron. Mater.

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In this study, we report the growth and characterization of high-quality SiGe/SiO 2 core−shell nanocrystals on an insulator. Our approach involves the solid-state dewetting of a germanium (Ge) film deposited via molecular beam epitaxy on an ultrathin silicon-on-insulator film. The resulting nanocrystals exhibit exceptional uniformity, a well-defined hemispherical shape, and distinct crystallographic facets, as confirmed by rigorous analyses using advanced techniques, such as high-resolution transmission electron microscopy and energy-dispersive spectrometry. Furthermore, we successfully integrated these SiGe/SiO 2 core/shell nanocrystals into a metal−insulator−semiconductor (MIS) structure. Through current−voltage and impedance spectroscopies, we determine the transport and electrical properties of this integrated system. Our measurements reveal the formation of a Schottky diode with high rectifying behavior. Importantly, impedance measurements allow us to elucidate the equivalent circuit of this MIS structure, highlighting the significant influence of the SiGe/SiO 2 core−shell nanocrystals on the electrical transport phenomena within the MIS architecture. These findings represent a significant advancement in the fabrication and characterization of SiGe/SiO 2 core/shell nanocrystals for MIS devices, opening up exciting possibilities for their applications in photovoltaics and photodetection.

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