Effect of Channel Doping and Fin Shapes on Performance of Junctionless Bulk FinFET

Biswas, Kalyan; Sarkar, Angsuman; Sarkar, Arghyadeep

doi:10.1109/vlsidcs47293.2020.9179912

Cited by 2 publications

(3 citation statements)

References 20 publications

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“…FinFET is one of the evolutionary techniques for application based less-power consuming circuits as it displays commendable performance to nullify the short-channel problems due to the fact that multiple gates are monitoring a single channel [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Influence of oxide thickness variation on analog and RF performances of SOI FinFET

Tripathy

Acharya

Rout³

et al. 2022

FACTA U EE

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This paper focuses on the impact of variation in the thickness of the oxide (SiO2) layer on the performance parameters of a FinFET analysed by varying the oxide layer thickness in the range of 0.8nm to 3nm. While varying the oxide layer thickness, the overall width of the FinFET is fixed at a value 30nm, and the FinFET parameters are analysed for structures with different oxide layer thickness. The parameters like drain current, transconductance, transconductance generation factor, parasitic capacitances, output conductance, cut-off frequency, maximum frequency, GBW, energy and power consumption are calculated to study the influence of FinFET oxide (SiO2) layer thickness variation. It is detected from the result and analysis that the drain current, transconductance, transconductance generation factor, gain bandwidth and output conductance improve with decrement in oxide layer thickness whereas, the parasitic capacitances, cut-off frequency and maximum frequency degrade when there is a reduction in oxide (SiO2) layer thickness. The parameters like energy and consumed power of FinFET get better when the oxide (SiO2) layer thickness increases.

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Section: Introductionmentioning

confidence: 99%

“…Constructing tri-gate FinFETs different approaches has been followed in recent years like SOI based FinFETs, bulk FinFET [6][7][8][9][10][11][12][13][14][15][16][17][18]. The inverted-T structure FinFET [19] is also designed which provides better drain current compared to the SOI based FinFET.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxide thickness variation on analog and RF performances of SOI FinFET

Tripathy

Acharya

Rout³

et al. 2022

FACTA U EE

View full text Add to dashboard Cite

show abstract

“…A spacer based design of FinFET [28] is also developed to improve the FinFET parameters. The effect of channel doping and Fin width on the performance parameters is represented in [29,30]. The impact of Fin shape is also studied in [31].…”

Section: Introductionmentioning

confidence: 99%

Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

Tripathy

Pk³

2021

Preprint

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In this paper, the influence of oxide (SiO2) layer thickness on the different figure of merits of a FinFET is analysed by varying the oxide layer thickness which is present between the gate and the Fin. Here, the overall thickness of the FinFET is taken to be 30nm, and the oxide (SiO2) layer thickness is changed from 0.8 nm to 3nm, and the analog, radio frequency parameters are determined for different structures. The performance parameters like drain current (ID), transconductance generation factor (TGF), transconductance (gm), output conductance (gds), parasitic capacitances like Cgs, Cgd, Cgg, cut-off frequency (fT), gain bandwidth product (GBW) and maximum frequency of oscillation (fmax) are calculated to learn the influence of variation in the FinFET oxide (SiO2) layer thickness. It is detected from the result and analysis that the drain current, output conductance, transconductance generation factor, transconductance and gain bandwidth product improve with decrement in oxide layer thickness. But as a tradeoff, the internal capacitances like Cgs, Cgd, Cgg, maximum frequency of oscillation and cut-off frequency degrade when there is a reduction in oxide (SiO2) layer thickness.

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Effect of Channel Doping and Fin Shapes on Performance of Junctionless Bulk FinFET

Cited by 2 publications

References 20 publications

Influence of oxide thickness variation on analog and RF performances of SOI FinFET

Influence of oxide thickness variation on analog and RF performances of SOI FinFET

Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

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