Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method

Wang, Fuan; Zhou, Jiangang; Wang, Xing; Chen, Da; Wang, Qiusen; Dou, Jiao; Li, Qi; Zou, Helin

doi:10.1007/s10854-018-9989-9

Cited by 8 publications

(2 citation statements)

References 34 publications

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“…It can be observed that the annealing temperature and doping concentration have a strong effect on its dielectric property. For all samples, ε r decreased gradually with the increase in frequency, which is due to the fact that the polarization process of some frameworks (such as space charges) cannot be achieved [33,34]. The significantly low ε r of PMN-PT-2Fe thin film annealed at 600 • C is attributed to presence of pyrochlore phase with low ε r and smaller grain size of thin film, which are also evident form XRD patterns and surface SEM images [35].…”

Section: Resultsmentioning

confidence: 80%

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Feng

Liu

et al. 2021

Nanomaterials

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Fe-doped 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) thin films were grown in Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of thin film were investigated. High (111) preferred orientation and density columnar structure were achieved in the 2% Fe-doped PMN-PT thin film annealed at 650 °C. The preferred orientation was transferred to a random orientation as the doping concentration increased. A 2% Fe-doped PMN-PT thin film showed the effectively reduced leakage current density, which was due to the fact that the oxygen vacancies were effectively restricted and a transition of Ti4+ to Ti3+ was prevented. The optimal ferroelectric properties of 2% Fe-doped PMN-PT thin film annealed at 650 °C were identified with slim polarization-applied field loops, high saturation polarization (Ps = 78.8 µC/cm2), remanent polarization (Pr = 23.1 µC/cm2) and low coercive voltage (Ec = 100 kV/cm). Moreover, the 2% Fe-doped PMN-PT thin film annealed at 650 °C showed an excellent dielectric performance with a high dielectric constant (εr ~1300 at 1 kHz).

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Section: Resultsmentioning

confidence: 80%

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Feng

Liu

et al. 2021

Nanomaterials

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“…Ce doped Pb(Zr 0.1 Ti 0.9 )O 3 has interesting electrical properties for electronic applications [13]. Ce doped PZT thin films revealed the dense columnar perovskite structure [14]. The substitution of Ce indicated the improvement in dielectric and ferroelectric properties of PZT [15].…”

Section: Introductionmentioning

confidence: 99%

Dielectric, impedance and modulus spectroscopy of Pb(Zr_0.52−xCe_xTi_0.48)O₃ (x = 0.00, 0.10) ferroelectric ceramics

Tiwari

Babu²,

Choudhary

2020

Phys. Scr.

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Lead zirconate titanate (PZT) ceramics of morphotropical phase boundary (MPB) composition shows enhanced physical properties on modification with suitable ions. In this work, Pb(Zr0.52-xCe x Ti0.48)O3, x = 0.00, 0.10 (PZCT) ferroelectric ceramics have been synthesized by solid state synthesis route. The ferroelectric nature of samples is confirmed by their transition of phase from the ferroelectric phase to the paraelectric phase. At 1 MHz frequency, the Curie temperature (T c ) of the material is slightly decreased to ∼375 °C from ∼377 °C. But at the aforementioned frequency, the magnitude of relative dielectric constant (ϵ r ) has been enhanced to ∼282 from ∼264 due to the substitution of cerium (Ce+4) ions at the zirconium site. Even at higher frequencies ranging from 1 kHz to 1 MHz, Ce modified PZT has shown negligible tangent loss (tan δ) upto 350 °C. The electrical response of the material is mainly governed by grain interiors only not by grain boundaries and electrode-interface. Electric modulus formalism analysis confirmed the occurrence of non-Debye type of electrical relaxation phenomenon in the material. The electrical conduction of the material is a thermally activated phenomenon, and it is governed by Jonscher's power law. The decrease in resistance of the compounds, with rise in temperature, indicate their semiconductor behavior (i.e. negative temperature coefficient of resistance behavior) at higher temperatures.

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Study of acetic acid addition on properties of PZT films prepared by sol–gel method

Cui

Kong

et al. 2019

J Mater Sci: Mater Electron

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Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method

Cited by 8 publications

References 34 publications

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Dielectric, impedance and modulus spectroscopy of Pb(Zr_0.52−xCe_xTi_0.48)O₃ (x = 0.00, 0.10) ferroelectric ceramics

Study of acetic acid addition on properties of PZT films prepared by sol–gel method

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Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method

Cited by 8 publications

References 34 publications

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Dielectric, impedance and modulus spectroscopy of Pb(Zr0.52−x Ce x Ti0.48)O3 (x = 0.00, 0.10) ferroelectric ceramics

Study of acetic acid addition on properties of PZT films prepared by sol–gel method

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Dielectric, impedance and modulus spectroscopy of Pb(Zr_0.52−xCe_xTi_0.48)O₃ (x = 0.00, 0.10) ferroelectric ceramics