Effect of carrier trapping on the hysteretic current-voltage characteristics in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Ag</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi>La</mml:mi><mml:mn>0.7</mml:mn></mml:msub><mml:msub><mml:mi>Ca</mml:mi><mml:mn>0.3</mml:mn></mml:msub><mml:msub><mml:mi>MnO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:mi>Pt</mml:mi></mml:mrow></mml:math>heterostructures

Shang, Dashan; Wang, Q.; Chen, Lidong; Dong, Rui; Li, X. M.; Zhang, W. Q.

doi:10.1103/physrevb.73.245427

Cited by 336 publications

(152 citation statements)

References 40 publications

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“…In this operating region, the J-V curves in the logarithmic plots are linear, with slopes of~2.18, 2.28, 2.34 and 2.43 for PF 14 -b-Piso 10 , PF 14 -b-Piso 20 , PF 14 -b-Piso 60 and PF 14 -b-Piso 100 , respectively. It should be noted that a slope greater than 2 indicates that the switching behavior in the OFF state qualitatively matches the trap-associated space-charge-limitedconduction model, 33 meaning that the holes are injected into the active layer of the memory cell and captured by hole transport/ trapping sites (PF) and then induce several electrons in electron transport/trapping sites (Piso) via a charge transfer interaction. The induced counter space charge near the electrode indeed limits the escape of charge carriers from the trapping sites.…”

Section: Resultsmentioning

confidence: 93%

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Wang

Saito

et al. 2016

NPG Asia Mater

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Diblock copolymers consisting of electron-donating poly[2,7-(9,9-dihexylfluorene)] (PF) rods and electron-withdrawing poly (pendent isoindigo) (Piso) coils were designed and synthesized through a click reaction. The electronic properties and interchain organization of the copolymers could be tuned by varying the PF/Piso ratio (PF 14 -b-Piso n (n = 10, 20, 60 and 100)). The highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels of the studied polymers were progressively reduced as the length of Piso increased, affecting the charge trapping and intramolecular charge transfer environment between PF and Piso domains. Thermally treated PF 14 -b-Piso n thin films exhibited a clear nanofibrillar structure, and the d-spacing was enhanced systematically as the Piso chain length increased. Resistive memory characteristics were explored with a sandwich indium tin oxide/PF 14 -b-Piso n s/Al device configuration. The enhanced conjugated PF conducting channels led to stable resistance switching behavior, exhibiting volatile SRAM (static random access memory) (PF 14 -b-Piso 10 ) and nonvolatile WORM (write-once-read-many-times) (PF 14 -b-Piso 20 , PF 14 -b-Piso 60 , PF 14 -b-Piso 100 ) characteristics with a large ON/OFF ratio (10 6 ) and a stable retention time (10 4 s). A more appealing feature is that such memory cells were integrated on a soft poly(dimethylsiloxane) substrate, allowing for the development of a stretchable data storage device. Reliable and reproducible electrical characteristics, including SRAM-and WORM-type memories, could be explored as the device was stretched under an applied tensile strain ranging from 0 to 50%. The studied donor-acceptor copolymers indeed showed great potential for stretchable electronic applications with controllable digital information storage characteristics. NPG Asia Materials (2016) 8, e298; doi:10.1038/am.2016.112; published online 26 August 2016 INTRODUCTION Polymer-based electrical bistable memory devices have been extensively studied owing to their advantages of structural flexibility, low-cost, printability and three-dimensional stacking. 1-3 Such memories can be switched between high and low resistance states (that is, OFF and ON states) by applying an external electric field. [4][5][6][7][8][9][10][11][12] Electrical memory characteristics can generally be divided into two categories, namely nonvolatile (for example, WORM (writeonce-read-many-times) and flash) and volatile memory (for example, dynamic random access memory and SRAM (static random access memory)), which show different tendencies for the stored charges to dispel. The volatility of these digital information storage devices can be controlled by (1) the charge transfer or charge trapping ability of the active materials and (2) the morphological packing structures in the memory layers. Conjugated block copolymers can effectively manipulate charge storage volatility because of their unique self-organization properties, on the basis of the chemical structures of

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Section: Resultsmentioning

confidence: 93%

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Wang

Saito

et al. 2016

NPG Asia Mater

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“…7(a) for the positive voltage regions. Following the sweeping direction, an Ohmic behavior (I f V) changed to an SCLC conduction (I f V 2 ), then there was an abrupt current increase at around 1 V, which suggests that there was a change from trap-unfilled SCLC conduction to trapfilled SCLC conduction [21]. From 1.2 to 0.2 V, the slope remains 2 within the hysteresis, and shows an Ohmic conduction in the sweep direction.…”

Section: Resultsmentioning

confidence: 94%

Crystal micromorphologies and forming voltage effect on resistance switching behaviors in Ti/Pr(Sr0.1Ca0.9)2Mn2O7/Pt devices

Sun

Song

Hua

et al. 2015

Journal of Alloys and Compounds

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“…Subsequently, at the threshold of the applied voltage (~0.7 V), there was a rapid increase in the current due to the trap-filled condition. The log I-log V plot exhibited linear Ohmic conduction, followed by a SCLC conduction, which corresponded to the Child's law region [15].…”

Section: Resultsmentioning

confidence: 99%

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

Senthilkumar¹,

Kim

2015

Transactions on Electrical and Electronic Materials

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We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10 5 cycles without degradation) and long retention time (5 × 10 3 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

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Effect of carrier trapping on the hysteretic current-voltage characteristics inAg∕La0.7Ca0.3MnO3∕Ptheterostructures

Cited by 336 publications

References 40 publications

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Crystal micromorphologies and forming voltage effect on resistance switching behaviors in Ti/Pr(Sr0.1Ca0.9)2Mn2O7/Pt devices

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

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