2016
DOI: 10.1016/j.matdes.2015.12.022
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Effect of carrier concentration on the optical band gap of TiO2 nanoparticles

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Cited by 115 publications
(50 citation statements)
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“…After being coupled with BiVO 4 , the absorption in the visible light region between 400 and 500 nm of BiVO 4 /TiO 2 /Ti heterojunction film increases with the increase in the amount of BiVO 4 , and the absorption edge shifts to 450 nm for the BiVO 4 /TiO 2 /Ti film prepared with 1000 s electrodeposition time. The band gap of a semiconductor can be calculated by employing the following equation [28]: false(ahvfalse)2=hvEnormalg,where a is the absorption coefficient, v is the light frequency and E g is the band gap of a semiconductor. From the curve of ( ahv ) 2 versus hv shown in figure 3 b , the energy of the band gap of TiO 2 /Ti film is 3.20 eV, which is the same as the result reported before [29].…”
Section: Resultsmentioning
confidence: 99%
“…After being coupled with BiVO 4 , the absorption in the visible light region between 400 and 500 nm of BiVO 4 /TiO 2 /Ti heterojunction film increases with the increase in the amount of BiVO 4 , and the absorption edge shifts to 450 nm for the BiVO 4 /TiO 2 /Ti film prepared with 1000 s electrodeposition time. The band gap of a semiconductor can be calculated by employing the following equation [28]: false(ahvfalse)2=hvEnormalg,where a is the absorption coefficient, v is the light frequency and E g is the band gap of a semiconductor. From the curve of ( ahv ) 2 versus hv shown in figure 3 b , the energy of the band gap of TiO 2 /Ti film is 3.20 eV, which is the same as the result reported before [29].…”
Section: Resultsmentioning
confidence: 99%
“…The UV-Vis DR spectra in the 190-800 nm range of the samples were recorded at room temperature using an Ocean Optics Inc. spectrometer (Mini-DT2) provided with a diffuse reflectance accessory. The optical energy bandwidth of the different semiconductor CdS and Zn x Cd 1−x S systems were calculated using the Kubelka-Munk (K-M) function [44] and Tauc's plot method [45][46][47] in which the linear part of the curve is extrapolated to find its intersection with the horizontal axis. A JEOL brand scanning electron microscope, model JSM-6390L, was used at 20 kV.…”
Section: Characterization Methodsmentioning
confidence: 99%
“…TiO 2 having wide band gap (3.2 eV) has been employed as a feasible electron acceptor for dye sensitized solar cells [15,19]. In the beginning it gave low efficiency (1%) which was tremendously enhanced when Gratzel used porous TiO 2 as anode material [20,21]. Low cost, high structure stability and photosensitivity of TiO 2 attracted the attention of researchers to develop new products [22,23].…”
Section: Introductionmentioning
confidence: 99%