2011
DOI: 10.1016/j.physb.2011.05.004
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Effect of calcination atmosphere on photoluminescence properties of nanocrystalline ZrO2 thin films prepared by sol–gel dip coating method

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Cited by 39 publications
(21 citation statements)
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“…[6][7][8][21][22][23][24][25] This PL emission originates from defect states caused by the different structural defects [6][7][8]22 that can explain a variety of observed PL bands. These latter are attributed usually to intrinsic defects such as oxygen vacancies 26 or their complexes located in the crystal volume, 6,27 at grain surface 7 or near impurities.…”
mentioning
confidence: 99%
“…[6][7][8][21][22][23][24][25] This PL emission originates from defect states caused by the different structural defects [6][7][8]22 that can explain a variety of observed PL bands. These latter are attributed usually to intrinsic defects such as oxygen vacancies 26 or their complexes located in the crystal volume, 6,27 at grain surface 7 or near impurities.…”
mentioning
confidence: 99%
“…The small shoulder at 530.7 eV is assigned to lattice oxygen while the main peak at 532.6 eV may be attributed to oxygen in adsorbed hydroxyl groups. The existence of multipeaks (530.7 and 532.6 eV) is related to the presence of oxygen defects [38]. The Sn 3d 5/2 located at about 486.4 eV, demonstrates that the chemical state of Sn in the sample is +4.…”
Section: X-ray Diffraction Studiesmentioning
confidence: 93%
“…The emission peaks were observed at 389 nm (3.18 eV), 306 nm (4.05 eV), 602 nm (2.05 eV) and 767 nm (1.61 eV). The energy gap of tetragonal ZrO 2 phase is greater than 5.5 eV [1][2][3]. At 243 nm (5.11 eV) excitation a large intensity emission band of 390 nm is produced.…”
Section: Optical Studiesmentioning
confidence: 99%
“…Of this class, wide-band gap oxide semiconductor of zirconia (ZrO 2 ) has occupied the forefront in the past decade [1][2][3] because of large binding energy of ZrO 2 has an ideal choice for inorganic passivation shells in a variety of semiconductor core/ shell nanoparticles. It is now well known that the metal doped ZrO 2 has the high potential for fabricating novel nanoelectronics and optical devices with enhanced performance.…”
Section: Introductionmentioning
confidence: 99%
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