Effect of C4H6O6 concentration on the properties of SnS thin films for solar cell applications

Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

“…[23,24]. While at low Sn precursor concentrations of 0.04 M and 0.08 M, the Raman spectra of the nanoparticles also shows a slight hump at 304 cm −1 , related to the characteristic phonon mode of Sn2S3 [25,26], revealing that the low Sn precursor concentration promotes the development of a sulfur-rich secondary phase, in agreement with the XRD results. in the synthesized nanoparticles.…”

“…The Raman spectra of the nanoparticles synthesized at different Sn precursor concentrations varying from 0.04 M to 0.12 M show two prominent phonon modes at 170 cm −1 and 204 cm −1 , along with a group of weak modes (91 cm −1 , 112 cm −1 , and 190 cm −1 ) within the ranges 89-125 cm −1 and 180-230 cm −1 , corresponding to characteristic Raman modes of the cubic SnS phase [23,24]. While at low Sn precursor concentrations of 0.04 M and 0.08 M, the Raman spectra of the nanoparticles also shows a slight hump at 304 cm −1 , related to the characteristic phonon mode of Sn 2 S 3 [25,26], revealing that the low Sn precursor concentration promotes the development of a sulfur-rich secondary phase, in agreement with the XRD results. [23,24].…”

Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

“…Beyond this concentration (0.75 M), the deconvolution of the broadened Sn 3d doublets suggests the presence of low intense Sn 2+ and high intense Sn 4+ , confirming the formation of the Sn 2 S 3 secondary phase along with SnS 2 . The high-resolution XPS spectrum of S 2p for the as-prepared films exhibited single peaks related to S 2− -Sn 2+ (161.3 eV) and S-Sn 4+ (162.3 eV) bonds at TA concentrations of 0.5-0.6 and 0.7 M, which are characteristic of single-phase SnS and SnS 2 films, respectively [35]. The remaining core-level S 2p spectra (for TA = 0.65 and 0.75 M) showed two deconvoluted peaks related to the binding energies of both S 2− -Sn 2+ (161.3 eV) and S-Sn 4+ (162.3 eV) bonding, suggesting the presence of the Sn 2 S 3 secondary phase.…”

“…The deposition procedure for SnS and SnS 2 films by CSP is schematically presented in Figure 2, and the process has been described in detail in our previous reports [35,36]. Analytical-grade tin chloride (SnCl 2 .2H 2 O, 0.1 M) and tartaric acid (C 4 H 6 O 6 , 1.2 M) were used as a tin source and complexing agent, respectively, and 10 mL of thioacetamide (C 2 H 5 NS, 0.50-0.75 M) was used as the source material for the S ions.…”

Deposition and facile control over the morphology of phase-pure SnS thin films via the spin-coating route

“…Deposition methods of SnS thin films are including vacuum and solution phases. [18][19][20][21][22][23][24][25][26][27] Solution phase methods for deposition of SnS thin films are favorable for the low-cost and large-scale production, and many researchers have reported successful deposition methods, such as chemical bath deposition (CBD), electrodeposition, spray deposition, successive ionic layer adsorption reaction (SILAR) and spin-coating method. [22][23][24][25][26][27] However, there are few reports for controlling surface morphology of SnS thin films while during directly depositing on substrate.…”