Effect of bulk microdefects induced in heat-treated Czochralski silicon on dielectric breakdown of thermal SiO2 films

Satoh, Yuhki; Murakami, Yoshio; Furuya, Hidemine; Shingyouji, Takayuki

doi:10.1063/1.111186

Cited by 20 publications

(10 citation statements)

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“…In addition, it is consistent with our previous article's claim: The breakdown field is not related to the dislocation loops induced by the two-step annealing. 9 We conclude that dislocation and stacking fault do not cause a large degradation of the breakdown field even they are incorporated into the SiO 2 film.…”

Section: Effect Of Osfs On the Breakdown Fieldmentioning

confidence: 72%

“…In our previous article, the effect of dislocation loops on the breakdown field was small and was masked by the effects of the platelet oxygen precipitates. 9 As for platelet oxygen precipitates, Figs. 4 and 6 show that the breakdown field variation with P i is most drastic around P i ϭ1.…”

Section: B Effect Of Octahedral Precipitates On the Breakdown Fieldmentioning

confidence: 99%

“…Metallic contaminants picked up during the fabrication of an integrated circuit degrade the breakdown field of a SiO 2 film, 1-4 as do crystal lattice defects [4][5][6][7][8][9] and roughness of the wafer surface. 10 Although this degradation has been the subject of a large number of studies, it is still incompletely understood.…”

Section: Introductionmentioning

confidence: 99%

“…We have reported the degradation due to BMDs induced by two-step heat treatments: 600°Cϫt 1 ϩ900°Cϫt 2 ͑t 1 and t 2 ϭ1-100 h͒ in N 2 . 9 The results can be summarized as follows:…”

Section: Introductionmentioning

confidence: 99%

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Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Satoh

Shiota

Murakami

et al. 1996

Journal of Applied Physics

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We used heat treatment to intentionally introduce various structural defects in Czochralski silicon substrates. The type, size, and number density of the induced defects were surveyed with transmission electron microscopy, and the defects were then incorporated into SiO 2 films ͑10-50 nm thick͒ during thermal oxidation in dry O 2 . The effect of the defects on dielectric strength of the SiO 2 films was examined with a time zero dielectric breakdown method. Larger platelet oxygen precipitates caused greater decreases of the breakdown field, and precipitates smaller than the SiO 2 film thickness did not appreciably reduce the breakdown field. Every large platelet oxygen precipitate incorporated in the SiO 2 film caused a degradation. Octahedral oxygen precipitates caused little degradation. The breakdown field was higher than 7 MV/cm and did not depend much on the SiO 2 film thickness and precipitate size. We discussed possible mechanisms for the degradation due to both kinds of precipitates. Oxidation-induced stacking faults formed by a surface oxidation did not markedly reduce the breakdown field when only segments of dislocations and stacking faults were incorporated in the SiO 2 film. Another serious degradation was caused by pits that were formed by dissolving octahedral oxygen precipitates in a HF solution. The breakdown field was lower for thicker oxide films, and it recovered as the pit shape became smoother during chemical etching. We proposed that this degradation was caused by a local thinning of SiO 2 film due to stress generated in the oxidation of pits. These results suggest that voids rather than the other reported grown-in defects play the most important role in the degradation observed for as-grown silicon.

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Section: Effect Of Osfs On the Breakdown Fieldmentioning

confidence: 72%

Section: B Effect Of Octahedral Precipitates On the Breakdown Fieldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…We have reported the degradation due to BMDs induced by two-step heat treatments: 600°Cϫt 1 ϩ900°Cϫt 2 ͑t 1 and t 2 ϭ1-100 h͒ in N 2 . 9 The results can be summarized as follows:…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Satoh

Shiota

Murakami

et al. 1996

Journal of Applied Physics

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“…Breakdown is initiated in the vicinity of defects in the oxide, whether these defects are intrinsic or extrinsic. Thus, breakdown can also be triggered either by impurities in the oxide [267][268][269][270][271][272][273][274][275] or by imperfections or impurities in the substrate silicon [276][277][278][279][280][281][282][283][284][285]. The breakdown patterns observed in oxides due to structural defects in the substrate are similar to the defect patterns observed in silicon vidicons due to defects in the substrates [286].…”

mentioning

confidence: 57%

Oxide Wearout, Breakdown, and Reliability

Dumin

2002

Oxide Reliability

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Resistive Switching in Nanogap Systems on SiO₂ Substrates

Yao

Lin

Zhang

et al. 2009

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Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (∼10 5 ), fast switching time (2 µs, test limit), durable cycles demonstrated show promising memory properties. The intermediate states observed reveal the filamentary conduction nature.Resistive switching in various materials such as metal oxides 1,2 , chalcogenides 3 and organic materials 4,5,6 has been intensively studied as candidates for future nonvolatile memories 7 . Recently, it also extends to new quasi-one dimensional (1D) and 2D materials such as encapsulated nanowires 8 , multi-walled carbon nanotubes (MWNTs) 9 , and graphene sheets 10 . In these nanostructures, the constriction in one dimension but less in the other(s) facilitates the observation of the switching events. The direct observations of nanosized gap or void structures in these systems come to similar switching mechanisms attributing to the electric close-and-break motion of the material at the gap/void region. Less attention has been paid on the substrate material of SiO 2 due to its good dielectric (insulating) property. Meanwhile, the amorphous form of SiO 11,12,13,14,15,16 or a defected SiO x surface 17 can exhibit memory phenomena, in which structural defects induced by high local field is one of the proposed causes 11 . For a gap system at nano size, it is expected that a high local field is built up during the switches between high-impedance (OFF) and low-impedance (ON) states. It therefore carries the significance to investigate the local field effect on the commonly used substrate material of SiO 2 . In the following context, we demonstrate resistive switching phenomena in various nanogap systems on SiO 2 substrate, made by different materials and means. The similar switching characteristics in all the systems point to the most likely cause: SiO 2 breakdown (BD) induced filaments, possibly through Si-Si wire formation. Shown in Fig. 1a, an initial gap system is a pair of tungsten (W) electrodes separated by ∼50 nanometers (nm) on a thermal-oxidized Si surface (the SiO 2 thickness is 200 nm, and same thickness is used for all the following devices), defined by standard electron beam lithography (EBL) and lift-off process. Electrical characterizations were performed using an Agilent 4155C semiconductor parameter analyzer i...

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Effect of bulk microdefects induced in heat-treated Czochralski silicon on dielectric breakdown of thermal SiO2 films

Cited by 20 publications

References 2 publications

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Oxide Wearout, Breakdown, and Reliability

Resistive Switching in Nanogap Systems on SiO₂ Substrates

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Effect of bulk microdefects induced in heat-treated Czochralski silicon on dielectric breakdown of thermal SiO2 films

Cited by 20 publications

References 2 publications

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Oxide Wearout, Breakdown, and Reliability

Resistive Switching in Nanogap Systems on SiO2 Substrates

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Product

Resources

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Resistive Switching in Nanogap Systems on SiO₂ Substrates