Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD

Zhang, Dong; Qin, Fuwen; Bai, Yang; Bian, Jiming; Li, Shuai; Li, Pan; Zhi, An-Bo; Liu, Xinglong; Jiang, Xin

doi:10.1016/j.diamond.2011.10.016

Cited by 4 publications

(5 citation statements)

References 19 publications

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“…Comparing sample-b to samples-(a, c, d), these SDD and EDD are about one order lower (these figures not shown here). Thus, we concluded that the TEM results totally accord with the previous results (XRD, AFM, OM and Raman), especially, this method could improve the GaN film grown on Si substrate by easier, simpler and get better results as compared to the complicated methods (11)(12)(13)(14)(15). Overall, it indicated that the multiple HLHT AlN buffer layers deposited at that growth temperature effectively reduced the threading dislocations, roughness surface, stress states and cracks, and they improved the quality of the GaN films grown on Si (111) substrates.…”

Section: Resultssupporting

confidence: 85%

“…However, the lowest stress of GaN film still can be got at the same growth temperatures of HLHT AlN buffer layers. [11][12][13][14][15][16][17][18][19][20] and b = 1/3 [11][12][13][14][15][16][17][18][19][20][21][22][23], respectively. To find the screw and edge dislocations, we used the two beam conditions for perpendicular vectors g = [0002] and g = [1-100] and the invisibility criteria g.b = 0.…”

Section: Resultsmentioning

confidence: 99%

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Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers

Tinh

Lin

et al. 2013

ECS Trans.

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We present the effect of multiple AlN buffer layers on characterizations of GaN film quality, which includes a thin high-low-high- temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers and found that the HLHT AlN buffer layers could significantly affect on the GaN films qualities. The buffer plays a very important role for the growth of GaN film on Si (111) substrate. The GaN film with an uniformly faceted surface and very high quality has been obtained at the optimized multiple HLHT AlN buffer layers of 50-nm-thick at 1010-800-1010 0C.

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Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers

Tinh

Lin

et al. 2013

ECS Trans.

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“…The c-axis diffraction peak positions, FWHM, grain size, tested c-axis lattice constants and calculated film stress under varying deposition temperatures are summarized in Table 1. Compared with the reported lattice constant in previous work [38], the lattice parameter is relatively large, and this is probably caused by the film stress. The increase in deposition temperature from 200 to 400 • C resulted in a gradual reduction in both c-axis lattice constant and FWHM and a gradual increase in grain size.…”

Section: Xrd Of Inn Thin Films Prepared At Varying Temperaturescontrasting

confidence: 66%

“…Since the lattice constant of diamond is 0.357 nm and the lattice constant of InN with a-axis is 0.3533 nm, the mismatch of lattice between diamond (111) and InN (0002) is 19.2%. Therefore, compared with traditional plasma-enhanced chemical vapor deposition (PECVD), ECR-PEMOCVD is more suitable for the deposition of this kind of thin film [36][37][38]. In this study, InN thin films on a self-standing diamond substrate were successfully prepared by an electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition [36,37] system and their properties were also studied.…”

Section: Introductionmentioning

confidence: 99%

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

et al. 2020

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The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) with inert N2 used as a nitrogen source. The thermal conductivity of diamond substrates makes the as-grown InN films especially attractive for various optoelectronic applications. Structural and electrical properties which depend on deposition temperature were systematically investigated by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurement. The results indicated that the quality and properties of InN films were significantly influenced by the deposition temperature, and InN films with highly c-axis preferential orientation and surface morphology were obtained at optimized temperatures of 400 °C. Moreover, their electrical properties with deposition temperature were studied, and their tendency was correlated with the dependence on micro- structure and morphology.

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“…The N 2 ionization reaction was greatly improved by ECR. Under the enhancement effect of ECR, a large number of activated nitrogen ions accumulated onto the substrate (Zhang et al, 2012). This is crucial for forming the InN thin film.…”

Section: Methodsmentioning

confidence: 99%

Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

et al. 2020

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Several InN film samples with superb properties were prepared on a self-supporting diamond substrate for different nitrogen flow rates using an electron cyclotron resonance plasma-enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. After the InN film samples were obtained, the samples were characterized via reflected high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM), and electron probe micro-analysis (EPMA) to study the effect of the nitrogen flow on the quality of the InN films. The experimental results show that the variation in the nitrogen flow has a great impact on the preferential growth of the (0002) crystal plane of the InN thin film. By increasing the nitrogen flow moderately, the crystal quality of the film is improved. Under the growth condition of appropriate nitrogen flow, InN thin films with a preferred orientation along the c-axis can be obtained, and the surface of the resulting InN thin films is relatively flat. However, a high nitrogen flow does not improve the film crystal quality. The results of the experiment and of the analysis show that the InN films prepared with a nitrogen flow rate of 80 sccm have an excellent preferential orientation. The result of the EPMA test shows that the percentages of the In and N atoms in the prepared film samples are close to a ratio of 1:1, and a small amount of metal In droplets is present. In addition, the InN thin films prepared in such condition have an excellent surface morphology and composition.

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Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD

Cited by 4 publications

References 19 publications

Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers

Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

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