Effect of boron localized states on the conduction band transport in B_xGa_1−xP

Abstract

Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of less than 0.012 J. Appl. Phys. 98, 093714 (2005); 10.1063/1.2127126Effect of lithium ion irradiation on the transport and optical properties of Bridgman grown n-type InSb single crystals

Interplay of boron localized states and electron transport in BxGa1-xAs0.11P0.89:Te

“…B is much lighter than Ga and possesses a higher electronegativity. Applying the electronegativity rule suggests that boron should form localized electronic states in GaP or GaAs that should act as electron traps in accordance with recent experiments [4,5]. Based on the results of these experiments and corresponding theoretical considerations, we assume that the energies of the boron localized states comprising isolated boron states, boron pairs, and higher cluster states vary linearly with composition y in (B,Ga)As y P -y 1 of low B content [6,7,9,10].…”

Structural and electronic properties of isovalent boron atoms in GaAs

“…Magnetotransport measurements under hydrostatic pressure can provide an indication for the average B related density of states (DOS). [15][16][17] These measurements suggest that the states of isolated B atoms and B clusters, which can act as isovalent charge carrier traps, are located in the region of the CB. However, the interpretation of pressure dependent magnetotransport measurements is rather challenging due to a lack of structural information.…”

“…Under group V rich growth conditions, as used in the investigated sample, isovalent incorporation on cationic positions is strongly favored. [15][16][17] The covalent radius of B (r B ¼ 85 pm) is much smaller than the covalent radii of Ga (r Ga ¼ 124 pm) and As (r As ¼ 121 pm) in the surrounding matrix. 10 This means the covalent B-As bonds are shorter than the covalent Ga-As bonds, r B þ r As < r Ga þ r As , which locally deforms the surrounding GaAs matrix towards the B impurity.…”

“…This illustrates that the impurity state of a B atom in the {110} surfaces does not lie 0.3 eV above the CBE as suggested for bulk GaAs layers. 17 The spectral structure of the experimental dI=dUðU; rÞ curves is much more indicative of a B impurity state in the band gap slightly below the CB. It is not unusual that the {110} surface affects the energetic position of the dopants.…”

“…This suggests that the extraordinary increase in the CB effective mass, which is reported for boride III-V semiconductors, may not be attributed to the B first nearest neighbor paring in the transition region between a dilute system and an alloy. 15,17,30 Further work is needed to clarify whether the observed deviations in the spatial B distribution from a CSRP in QWs 3 with a B concentration of 1% prevail also at lower and higher amounts of B atoms.…”