Effect of boron concentration on recombination at the <i>p</i>-Si–Al2O3 interface

Black, Lachlan E.; Allen, Thomas G.; McIntosh, Keith R.; Cuevas, Andrés

doi:10.1063/1.4867643

Cited by 46 publications

(32 citation statements)

References 38 publications

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“…By fitting the EBIC experimental data using Sentaurus TCAD simulation, the electron surface recombination velocity in this case was extracted to be 2.8 × 10 5 cm/s. The S n 0 measured in our case is slightly higher than the S n 0 values reported for dedicated test structures [26], [27]. This is not unexpected as the sample was taken from a non-optimized solar cell batch that was fabricated using inline tools more than two years ago.…”

Section: Sample Preparation and Experimental Setupcontrasting

confidence: 51%

Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

Meng

Wong

et al. 2015

IEEE J. Photovoltaics

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In this paper, we demonstrate that the surface recombination velocity of electrons S n0 at highly p + -doped silicon surfaces can be quantified using the electron-beam-induced current (EBIC) technique. First, the 3-D electron-beam sample interaction is simulated using CASINO Monte-Carlo software in order to generate the 3-D carrier generation profile. Subsequently, this carrier generation profile is used in Sentaurus Technical Computer-Aided Design device modeling, and the EBIC response is simulated as a function of S n0 . The simulation results show a near-perfect match with the EBIC measurements obtained on a passivated and depassivated p + -emitter of n-type silicon wafer solar cells. In addition, localized S n0 extraction on an area of 30 × 30 nm 2 is presented, clearly illustrating the advantage of EBIC as an electron-beam-based characterization technique compared with optical techniques.

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Section: Sample Preparation and Experimental Setupcontrasting

confidence: 51%

Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

Meng

Wong

et al. 2015

IEEE J. Photovoltaics

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“…However, while a lighter doping will decrease recombination in the bulk of the emitter, it might not assist in further reducing the surface recombination rate in the passivated regions [53] and will increase the recombination rate at metallized regions because of reduced field-effect passivation [54], [55]. A possible solution is the adoption of a selective emitter structure, which could be implemented by laser incorporation of Al atoms from the passivating ALD Al 2 O 3 , as already demonstrated for the BSF of p-type PERC cells [56].…”

Section: Best I-v Results and Light-induced Degradationmentioning

confidence: 99%

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Cornagliotti

Urueña

Aleman

et al. 2015

IEEE J. Photovoltaics

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We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al 2 O 3 and PECVD SiO x . After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al 2 O 3 /SiO x stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm 2 , provided that the Al 2 O 3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al 2 O 3 /SiO x passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and V o c above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.

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“…In our calculations, the surface recombination velocities were modelled with a single parameter for electrons and holes, S 0 = S n = S p . The parameters S 0 , S n and S p should not be confused with the effective surface recombination velocity, S eff , which is deduced from the effective lifetime of the minority carriers in the substrate and commonly reported for photovoltaic devices [48,72]. Figure 7 shows the simulation structure, which corresponds to 1/8 of the real device.…”

Section: Simulation Modelmentioning

confidence: 99%

Predictable quantum efficient detector based onn-type silicon photodiodes

et al. 2017

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Ikonen, E. (2017). Predictable quantum efficient detector based on n-type silicon photodiodes. Metrologia, 54(6) AbstractThe predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO 2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al 2 O 3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatiallyOriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

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Effect of boron concentration on recombination at the p-Si–Al2O3 interface

Cited by 46 publications

References 38 publications

Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Predictable quantum efficient detector based onn-type silicon photodiodes

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Effect of boron concentration on recombination at the p-Si–Al2O3 interface

Cited by 46 publications

References 38 publications

Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2 O3

Predictable quantum efficient detector based onn-type silicon photodiodes

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Product

Resources

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Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃