Abstract:Despite
recent impressive advances in synthesis of all-conjugated
diblock copolymers via facile quasi-living Grignard metathesis (GRIM)
polymerization, it remains challenging to achieve well-defined all-conjugated
triblock copolymers of interest. Herein, we report the judicious design
and synthesis of a series of all-conjugated triblock copoly(3-alkylthiophene)s
consisting of poly(3-butylthiophene) (P3BT), poly(3-hexylthiophene)
(P3HT), poly(3-octylthiophene) (P3OT), or poly(3-dodecylthiophene)
(P3DDT) i… Show more
“…Recently, we have reported reversible phase transition between forms I and II in P3HS thin films treated by alternating thermal and solvent vapor annealing and the cocrystals of poly(3-butylhexylthiophene)- block -poly(3-hexylselenophene) (P3BT- b -P3HS) for high-performance organic field-effect transistors (OFETs). Furthermore, we have extended the cocrystals to triblock copoly(3-alkylthiophene)s and explored the effect of block sequence on their crystalline and charge transport behavior . However, as an important member in the P3AS family, the relation between crystalline structures of poly(3-butylselenophene) (P3BS) and their charge transport properties has not yet been reported due to its synthesis difficulty and poor solubility in common organic solvents.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, we have extended the cocrystals to triblock copoly(3-alkylthiophene)s and explored the effect of block sequence on their crystalline and charge transport behavior. 28 However, as an important member in the P3AS family, the relation between crystalline structures of poly(3-butylselenophene) (P3BS) and their charge transport properties has not yet been reported due to its synthesis difficulty and poor solubility in common organic solvents. Thus, it is challenging to do film deposition for the fabrication of thin film devices.…”
Despite
significant advances in double-crystalline coil–coil
block copolymers (BCPs), investigations into double-crystalline all-conjugated
rod–rod BCPs have been comparatively fewer and are limited
in scope. Moreover, the ability to control the crystalline structures
of all-conjugated BCPs may endow the materials and devices with enhanced
optoelectronic properties over the two respective constituents. Herein,
we report the synthesis of a series of poly(3-hexylthiophene)-block-poly(3-butylselenophene) (P3HT-b-P3BS)
BCPs with tunable block ratios and investigate the effects of block
ratio and thermal annealing process on their crystallization and microphase-separated
structures. These rod–rod BCPs exhibit a sole P3HT crystallization
(P3HT/P3BS = 63:37) or individual P3HT and P3BS crystallization (P3HT/P3BS
= 55:45 and 42:58) in as-cast thin films, influenced by the block
ratio of P3HT/P3BS. Interestingly, upon 200 °C-annealing (i.e.,
annealed at the temperature below the melting points of P3HT and P3BS
form I blocks), P3HT-b-P3BS (P3HT/P3BS = 63:37) remains
the sole P3HT crystallization, while P3HT-b-P3BS
(P3HT/P3BS = 55:45 and 42:58) transforms from two individual P3HT
and P3BS crystal domains into cocrystals, accompanied by the phase
transition of P3BS block from form II to I. Remarkably, after a higher
thermal annealing at 230 °C (i.e., close to the melting point
of P3HT block yet below the melting point of P3BS form I block), the
cocrystalline structures originally existing in P3HT-b-P3BS (P3HT/P3BS = 55:45 and 42:58) at the 200 °C-annealing
process do not form, and they reverse back to individual P3HT and
P3BS form I crystals. Finally, the relationship between various structures
of P3HT-b-P3BS and the resulting charge mobilities
is clarified. This study provides an insight into the interplay between
microphase separation of P3HT-b-P3BS and crystallization
of both P3HT and P3BS blocks tailored by the block ratio and thermal
annealing temperature and correlates their different structures with
the charge transport properties.
“…Recently, we have reported reversible phase transition between forms I and II in P3HS thin films treated by alternating thermal and solvent vapor annealing and the cocrystals of poly(3-butylhexylthiophene)- block -poly(3-hexylselenophene) (P3BT- b -P3HS) for high-performance organic field-effect transistors (OFETs). Furthermore, we have extended the cocrystals to triblock copoly(3-alkylthiophene)s and explored the effect of block sequence on their crystalline and charge transport behavior . However, as an important member in the P3AS family, the relation between crystalline structures of poly(3-butylselenophene) (P3BS) and their charge transport properties has not yet been reported due to its synthesis difficulty and poor solubility in common organic solvents.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, we have extended the cocrystals to triblock copoly(3-alkylthiophene)s and explored the effect of block sequence on their crystalline and charge transport behavior. 28 However, as an important member in the P3AS family, the relation between crystalline structures of poly(3-butylselenophene) (P3BS) and their charge transport properties has not yet been reported due to its synthesis difficulty and poor solubility in common organic solvents. Thus, it is challenging to do film deposition for the fabrication of thin film devices.…”
Despite
significant advances in double-crystalline coil–coil
block copolymers (BCPs), investigations into double-crystalline all-conjugated
rod–rod BCPs have been comparatively fewer and are limited
in scope. Moreover, the ability to control the crystalline structures
of all-conjugated BCPs may endow the materials and devices with enhanced
optoelectronic properties over the two respective constituents. Herein,
we report the synthesis of a series of poly(3-hexylthiophene)-block-poly(3-butylselenophene) (P3HT-b-P3BS)
BCPs with tunable block ratios and investigate the effects of block
ratio and thermal annealing process on their crystallization and microphase-separated
structures. These rod–rod BCPs exhibit a sole P3HT crystallization
(P3HT/P3BS = 63:37) or individual P3HT and P3BS crystallization (P3HT/P3BS
= 55:45 and 42:58) in as-cast thin films, influenced by the block
ratio of P3HT/P3BS. Interestingly, upon 200 °C-annealing (i.e.,
annealed at the temperature below the melting points of P3HT and P3BS
form I blocks), P3HT-b-P3BS (P3HT/P3BS = 63:37) remains
the sole P3HT crystallization, while P3HT-b-P3BS
(P3HT/P3BS = 55:45 and 42:58) transforms from two individual P3HT
and P3BS crystal domains into cocrystals, accompanied by the phase
transition of P3BS block from form II to I. Remarkably, after a higher
thermal annealing at 230 °C (i.e., close to the melting point
of P3HT block yet below the melting point of P3BS form I block), the
cocrystalline structures originally existing in P3HT-b-P3BS (P3HT/P3BS = 55:45 and 42:58) at the 200 °C-annealing
process do not form, and they reverse back to individual P3HT and
P3BS form I crystals. Finally, the relationship between various structures
of P3HT-b-P3BS and the resulting charge mobilities
is clarified. This study provides an insight into the interplay between
microphase separation of P3HT-b-P3BS and crystallization
of both P3HT and P3BS blocks tailored by the block ratio and thermal
annealing temperature and correlates their different structures with
the charge transport properties.
“…It was found that the stability of the triblock copolymers under visible light irradiation at ambient temperature was improved by the addition of PANi block [127]. It was also reported by the previous literature that the triblock copolymer has better control of the on-chain orientation and thus is able to give an improvement in the produced conjugated polymers properties [60]. Table 7 summarizes the advantages and disadvantages of the copolymerization and blending methods.…”
mentioning
confidence: 79%
“…An acid dopant is usually used during the synthesis of PANi to improve its conductivity. One of the most common dopants used is hydrochloric acid (HCl) [60,61]. Sulphuric acid (H 2 SO 4 ) is another acid dopant that is used as an alternative to HCl in the PANi synthesis.…”
Section: Acid Dopants For Pani Synthesismentioning
Poly(methyl methacrylate) (PMMA) is a lightweight insulating polymer that possesses good mechanical stability. On the other hand, polyaniline (PANi) is one of the most favorable conducting materials to be used, as it is easily synthesized, cost-effective, and has good conductivity. However, most organic solvents have restricted potential applications due to poor mechanical properties and dispersibility. Compared to PANi, PMMA has more outstanding physical and chemical properties, such as good dimensional stability and better molecular interactions between the monomers. To date, many research studies have focused on incorporating PANi into PMMA. In this review, the properties and suitability of PANi as a conducting material are briefly reviewed. The major parts of this paper reviewed different approaches to incorporating PANi into PMMA, as well as evaluating the modifications to improve its conductivity. Finally, the polymerization condition to prepare PMMA/PANi copolymer to improve its conductivity is also discussed.
“…Many rod-coil block copolymers that consist of P3HT are reported to exhibit good optoelectronic properties. Rod-coil diblock and triblock copolymers with P3HT were synthesized using Grignard metathesis polymerization (GRIM) and other living polymerization techniques. − The synthesis of rod-rod block copolymers with P3HT was performed by attaching a liquid crystalline block to P3HT. There are a few recent reports based on the synthesis of all conjugated block copolymers based on P3HT or a block copolymer with liquid crystalline blocks attached to P3HT. , Stefan’s group reported P3HT block copolymers comprising poly(γ-benzyl- l -glutamate) and poly( N -hexylisocyanate). , In another report, Lin and co-workers had demonstrated the synthesis of a P3HT- b -poly(3-butylthiophene) diblock copolymer with greatly improved crystallinity and electrical conductivity upon solvent annealing .…”
A block copolymer with discotic liquid crystalline behavior was synthesized using Grignard metathesis polymerization (GRIM) and initiators for continuous activator regeneration atom transfer radical polymerization (ICAR-ATRP). A novel discotic liquid crystalline mesogen, 6-(pyren-1-yloxy)hexyl methacrylate (PyMA), comprises a block that is attached to regioregular poly(3hexylthiophene) (rr-P3HT) generated by GRIM and subjected to end-group modification. Due to the continuous regeneration of Cu + in the reaction mixture in ICAR-ATRP compared to conventional methods, the synthesis was successfully performed with less catalyst. The purity and yield of the final product are increased by eliminating rigorous post-synthesis purification. Stacked pyrene units have contributed to the enhanced long-range π−π interactions and aligning of the P3HT block as observed in thin-film X-ray diffraction (XRD). Furthermore, field-effect mobilities in the order of 10 −2 cm 2 V −1 s −1 in bottom-gate, top-contact organic field-effect transistors (OFETs) suggest an enhancement in charge transport due to the discotic electron-rich pyrene units that help mitigate the insulating effect of the methacrylate backbone. The formation of uniform microdomains of P3HT-bpoly(PyMA) observed with tapping mode atomic force microscopy (TMAFM) on the channel regions of OFETs indicates the unique packing of the block copolymer in comparison to pristine P3HT. Thermotropic properties of the novel discotic mesogen in the presence and absence of P3HT were observed with both the poly(3-hexylthiophene)-b-poly(6-(pyren-1-yloxy)hexyl methacrylate) (P3HT-b-poly(PyMA)) block copolymer and poly(6-(pyren-1-yloxy)hexyl methacrylate) (poly(PyMA)) homopolymer using polarized optical microscopy (POM) and differential scanning calorimetry (DSC).
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