2015
DOI: 10.1016/j.elspec.2015.05.019
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Effect of binding group on hybridization across the silicon/aromatic-monolayer interface

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Cited by 9 publications
(32 citation statements)
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“…This trend agrees with the gas-phase DFT calculations, although, as expected, the differences between IPs derived from UPS are smaller than the gas-phase DFT differences. Stabilization of energy levels upon adsorption (i.e., from gas-phase to surface-adsorbed species) is well-documented and attributed to surface polarization effects (50), dipole-dipole interactions between peptides in the monolayer (51,52), and molecule-substrate charge rearrangement (53,54). However, the work functions of the peptide monolayers on Au hardly change with Trp position (SI Appendix, Fig.…”
Section: Significancementioning
confidence: 99%
“…This trend agrees with the gas-phase DFT calculations, although, as expected, the differences between IPs derived from UPS are smaller than the gas-phase DFT differences. Stabilization of energy levels upon adsorption (i.e., from gas-phase to surface-adsorbed species) is well-documented and attributed to surface polarization effects (50), dipole-dipole interactions between peptides in the monolayer (51,52), and molecule-substrate charge rearrangement (53,54). However, the work functions of the peptide monolayers on Au hardly change with Trp position (SI Appendix, Fig.…”
Section: Significancementioning
confidence: 99%
“…In molecular junctions, controlling the energy level alignment is a critical issue . In this context, the molecule–electrode interaction strength, Γ (in eV), is one of the critical parameters because it determines the tunneling rate across the junction and the level of hybridization of the molecular orbitals with the orbitals from the electrodes . Often molecules are attached to electrodes via covalent interactions to achieve strong coupling.…”
mentioning
confidence: 99%
“…Often molecules are attached to electrodes via covalent interactions to achieve strong coupling. Strong coupling results in high tunneling rates, and the molecular levels follow the changes in the Fermi levels of the electrodes under bias, but it also causes broadening of the molecular energy levels ( Figure a) . This molecular energy level broadening is often undesirable as it reduces the offset in energy between molecular orbitals and the Fermi level of the electrode ( δE ME in eV), which can cause leakage currents and, for instance, lower the performance of molecular diodes .…”
mentioning
confidence: 99%
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“…15,16 The nature of the connection to silicon for electronic applications is critical as the chemical identity of this linkage can have profound effects on the electronics of the underlying semiconductor. 17,18 For instance, the junction resistance of silicon-based solar generators can be reduced by surface functionalization, thus optimizing the electrical transport throughout the system. 5 The thickness of a self-assembled monolayer (SAM) or the length of molecular wires on a functionalized surface will also have a significant impact on electron-transport mechanisms.…”
Section: ■ Introductionmentioning
confidence: 99%