Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Boulbar, E. D. Le; Edwards, M. J.; Vittoz, S.; Vanko, G.; Brinkfeldt, K.; Rufer, Libor; Johander, Per; Lalinský, T.; Bowen, Chris R.; Allsopp, D.W.E.

doi:10.1016/j.sna.2013.02.017

Cited by 32 publications

(18 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The III-V nitrides is also having a high potential for monolithic integration [ 21 ]. There have been various studies on the AlGaN/GaN based pressure sensors for room temperature sensing applications [ 22 , 23 ]. In this article, we have investigated high temperature pressure sensing behavior of AlGaN/GaN based devices and its electrical properties with the applied pressure have been studied with the temperature.…”

Section: Introductionmentioning

confidence: 99%

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

2018

View full text Add to dashboard Cite

A highly sensitive Gallium Nitride (GaN) diaphragm based micro-scale pressure sensor with an AlGaN/GaN heterostructure field effect transistor (HFET) deflection transducer has been designed and fabricated for high temperature applications. The performance of the pressure sensor was studied over a pressure range of 20 kPa, which resulted in an ultra-high sensitivity of ~0.76%/kPa, with a signal-to-noise ratio as high as 16 dB, when biased optimally in the subthreshold region. A high gauge factor of 260 was determined from strain distribution in the sensor membrane obtained from finite element simulations. A repeatable sensor performance was observed over multiple pressure cycles up to a temperature of 200 °C.

show abstract

Section: Introductionmentioning

confidence: 99%

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

2018

View full text Add to dashboard Cite

show abstract

“…Gallium nitride (GaN), a wide direct band gap semiconductor, has attracted considerable academic as well as industrial attention for their potential applications in light-emitting devices, high mobility transistors, field effect transistors [1][2][3][4][5]. The junction properties of these devices depends on several parameters such as surface properties of the GaN film, formation of insulating layer between GaN and silicon wafer, doping level of semiconductors, density of interface states and defects.…”

Section: Introductionmentioning

confidence: 99%

A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

Yakuphanoğlu

Shokr

Gupta

et al. 2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Moreover, at a constant temperature, the percent current change of the AlGaN/GaN sensor slightly decreases with increasing V DS . This phenomenon might be caused by the self-heating effect, which results in the elevated channel temperature [28].…”

Section: Static Measurementmentioning

confidence: 99%

“…Such a device can be realized by etching away the substrate to form a MEMS structure and building the AlGaN/GaN sensing https://doi.org/10.1016/j.sna.2020.112217 0924-4247/© 2020 Published by Elsevier B.V. element on it. The sensitivity in the field of pressure sensors is usually considered as the change of capacitance [24], output current [25,26] or voltage [27] of the device with applied pressure, which could be enhanced by lowering the gate bias of the transistor [14,28] or increasing the Al content of the AlGaN layer [14]. It can be concluded from literature that most of the prior works on AlGaN devices are only capable of measuring over-pressures instead of vacuum (thus pressures exceeding 100 kPa (absolute)).…”

Section: Introductionmentioning

confidence: 99%

Low power AlGaN/GaN MEMS pressure sensor for high vacuum application

Sun

Liu

et al. 2020

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

A micro-scale pressure sensor based on suspended AlGaN/GaN heterostructure is reported with nonlinear sensitivity. By sealing the cavity, vacuum sensing at various temperatures was demonstrated. To validate the proposed concept of the AlGaN/GaN vacuum sensor, a 700 m diameter circular membrane was electrically characterized under applied static and dynamic pressures at various temperatures ranging from 25 • C to 100 • C. The current change of the AlGaN/GaN heterostructure increased as the vacuum and temperature increases due to the increase of 2DEG density by tensile strain. The dynamic current change from 96 kPa down to 10 Pa of AlGaN/GaN heterostructure pressure sensor was 18.75 % at 100 • C. The maximum sensitivity reached 22.8 %/kPa with a power consumption of 1.8 W. These results suggest that suspended AlGaN/GaN heterostructures are promising for high vacuum and high-temperature sensing applications.

show abstract

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Cited by 32 publications

References 12 publications

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

Low power AlGaN/GaN MEMS pressure sensor for high vacuum application

Contact Info

Product

Resources

About