Effect of bending on resistive switching of NiO/ZnO nanocomposite thin films

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO2 resistive memory

“…Figure 3(b) shows the ON/OFF ratio of unbent device with about 12.1% degradation over ∼10 7 s at room temperature. These can be ascribed to the oxygen in the air reduces the density of oxygen vacancies and influences the carrier transport, which leads to a lower I LRS [22]. To investigate the effect of mechanical stress on the retention characteristic, we also did in-suit measurements on resistive switching of the 1D1R under bending condition.…”

“…The mechanical property of oxide materials is significantly influenced by the grain size [26]. Compared with the highly crystalline ZnO nanoparticle [22], the state of TiO 2 nanoparticle is amorphous with size of ∼10 nm [27]. The yield strength of TiO 2 film is larger than that of the ZnO film based on the well-known Hall-Petch theory.…”

Bending effect on the resistive switching behavior of a NiO/TiO2 p–n heterojunction

“…Then, solution A was slowly added to solution B under stirring for 1 h. Details of the sol-gel synthesis for NiO and TiO 2 nanoparticles have been previously described. 19,20 The NiO and TiO 2 lms were successively deposited by spin coating on the Si (100) and ITO/PET substrate at 800 rpm for 5 s immediately followed by 3000 rpm for 30 s. Each layer with a thickness of about 200 nm was preheated at 100 C for 5 min to remove the solvent and organic residuals. The GaIn liquid droplet was employed as the top electrode in our device.…”

“…In our case, the bending-induced heating effect and micro-cracks may accelerate the oxidation process in the device. 19 The electrical performance of a exible memory device is correlated to the evolution of cracks. Chang et al have reported that oxygen or metal ions in metallic oxides are easily diffused and accumulate at the grain boundary.…”

Raman spectroscopic study of ZnO/NiO nanocomposites based on spatial correlation model

“…Recent study showed, that the ZnO/NiO nanocomposites exhibit resistive switching properties which are exploited in the fabrication of Resistive Random-Access Memories (ReRAMs). 6 Though, signicant attention has been paid to the morphological evolution of the ZnO/NiO composites, [7][8][9] a detail understanding about the structural disorder and defects is particularly of interest from both, theoretical and experimental point of view. Since Raman scattering study is based on the inelastic scattering due to lattice phonons, the nature of the material structure and structural disorder and, can be investigated using the Raman spectroscopic techniques.…”