Effect of BaTiO3 buffer layer on multiferroic properties of BiFeO3 thin films

Abstract

BiFeO 3 (BFO) films were processed on BaTiO3 (BTO) buffered (111) Pt/Ti/SiO2/Si substrate by pulsed laser deposition. Improved ferroelectric properties, as well as induced ferromagnetism, were observed by the insertion of a BTO layer for rather thick BFO films (450 nm) deposited at an oxygen pressure of 40 mTorr. Reduced leakage current, coercive field, and increased ferroelectric saturation of BFO/BTO bilayer films were obtained and compared with those of BFO films. In order to better understand the buffer layer effect on the magnetic properties, two thinner (140 and 220 nm) BFO films were also deposited and investigated. Both films showed ferromagnetic hysteresis loops and larger in-plane magnetization than out-of-plane magnetization. By introducing the BTO barrier layer, the remnant and saturated magnetizations were also increased. These results demonstrated not only the interface constraint effect but also a coupling between ferroelectric BTO and magnetic BFO, which deserve further investigation.

Enhanced Electric and Magnetic Properties of the Epitaxial $({\rm Ba}_{0.5}{\rm Sr}_{0.5}){\rm TiO}_{3}/{\rm BiFeO}_{3}$ Multiferroic Heterostructure

“…In addition, a low leakage current in the BST/BFO heterostructure suggest that the BST layer play a role as a barrier layer in blocking the oxygen vacancies movement from the BFO layer to the electrode layer, thus, reduced the accumulation of oxygen vacancies. A similar phenomenon has been reported by Yang et al [20] To further investigate the leakage mechanisms of BST/BFO heterostructure, the leakage current curves in Fig. 4(a) was replotted in log-log scale (Fig.…”

Growth and Characterization of Na0.5Bi0.5TiO3Thin Films with BaTiO3Buffer Layer (Study of Au/Na0.5Bi0.5TiO3/BaTiO3/Pt Capacitor)

“…There are several reports in which a thin layer of this material is used as a buffer layer to enhance the desired properties of a material [10][11][12][13][14][15][16]. Also, BT/NBT-BT/BT trilayer capacitor synthesis using chemical solution deposition has been studied by Y. Guo et al [17].…”

Heteroepitaxial Pb0.9Sr0.1TiO3/Bi0.9La0.1FeO3/Pb0.9Sr0.1TiO3 multiferroic structure: an effective way to improve the electrical, ferroelectric and magnetic performance

“…However, the single BLF layer which was deposited at the same conditions shows a slim unsaturated P * E loop. It should be noted that the conductive dissipation can be responsible for that unsaturated loose P * E loop in ferroelectric materials [35]. Compared with single BLF film, the lower concentration of defects in PST/ BLF/PST trilayer is corresponding to its higher polarizations.…”