2004
DOI: 10.1002/pssc.200405397
|View full text |Cite
|
Sign up to set email alerts
|

Effect of band inversion on the phonon spectra of Hg 1– x Zn x Te and Hg 1– x Cd x Te semiconductor alloys

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2005
2005
2024
2024

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 5 publications
0
1
0
Order By: Relevance
“…Nevertheless, Δ changes with compositions, and by alloying two proper parent compounds together and adjusting their ratios, the splitting energy can eventually reach zero (aligned) in a particular composition ( 24 ). In fact, this concept is analogous to that for inducing electronic band inversion in topological materials such as Pb 1− x Sn x Se and Hg 1− x Zn x Te ( 25 , 26 ) and functions universally as a method for tuning the electronic bands of alloys.…”
mentioning
confidence: 99%
“…Nevertheless, Δ changes with compositions, and by alloying two proper parent compounds together and adjusting their ratios, the splitting energy can eventually reach zero (aligned) in a particular composition ( 24 ). In fact, this concept is analogous to that for inducing electronic band inversion in topological materials such as Pb 1− x Sn x Se and Hg 1− x Zn x Te ( 25 , 26 ) and functions universally as a method for tuning the electronic bands of alloys.…”
mentioning
confidence: 99%