2006
DOI: 10.1016/j.tsf.2006.01.004
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Effect of back-contact barrier on thin-film CdTe solar cells

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Cited by 213 publications
(116 citation statements)
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“…While the metal back-contact layer is necessary for collection of photo-generated carriers, it also helps to increase the light absorption by increasing the path length as the incident light bounces back [22]. The anti-reflection coating layer on the top increases the coupling of the incident light to the solar cell [23].…”
Section: Eot Based Solar Cell Structurementioning
confidence: 99%
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“…While the metal back-contact layer is necessary for collection of photo-generated carriers, it also helps to increase the light absorption by increasing the path length as the incident light bounces back [22]. The anti-reflection coating layer on the top increases the coupling of the incident light to the solar cell [23].…”
Section: Eot Based Solar Cell Structurementioning
confidence: 99%
“…The metal fingers on the top of anti-reflection coating layer creates a shaded region in active layer, and thereby, reduces the light absorption by ∼10% [24]. The effects of the metal back-contact layer, the anti-reflection coating layer, and the metal fingers are well known and have been investigated in detail [22][23][24].…”
Section: Eot Based Solar Cell Structurementioning
confidence: 99%
“…4, a parallel combination of forward-biased diodes is used to independently simulate recombination currents in the quasi neutral (JQNR) and space charge (JSCR). The back contact behavior is represented by the parallel combination of a reverse-biased diode (Jb) and shunt conductance (1/Rb) that was previously used to model performance characteristics observed in the first quadrant [12]. The theoretical basis for the two-diode model as a general expression for the current produced in a solar cell can be found in Ref.…”
Section: J-v Curve Modelingmentioning
confidence: 99%
“…[13]. When the barrier height, Eb, associated with the back contact is low (Eb < 0.5 eV, Jb >100 mA/cm 2 ), the back contact impact on 4th quadrant behaviour, is minimized [12] such that the current-density, J, and voltage, V, of the solar cell is represented by: (2) where JSCR, JQNR, and Jph are the recombination currents and photo generated current respectively, while Rs and Rsh represent series and parallel (shunt) resistance losses. JSCR and JQNR are further represented by the following:…”
Section: J-v Curve Modelingmentioning
confidence: 99%
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