High-quality optical microcavities are prospective in many optoelectronics fields like optical communication, nonlinear optics, and quantum information technology. For quantum telecommunication over 1.55 μm silica-fiber-based networks, micropillar cavities containing quantum dots (QDs) are strongly required to construct quantum devices such as single-photon sources (SPSs). The straight way could be using micropillars composed of traditional InGaAsP/InP distributed Bragg reflectors (DBRs), which can in principle serve as efficient 1.55 μm SPSs. To reduce the difficulty in fabricating such~30 μm high pillars, structure hybridizing semiconductor with dielectric materials is designed. Consisting of Si/ SiO 2 DBRs and an InP active layer, such a micropillar readily enhances the rate of singlephoton emitting from an InAs/InP QD to be over GHz and serves as a photon-indistinguishable SPS. To strongly couple a 1.55 μm QD with an optical mode, the Si/SiO 2-InP hybrid micropillar cavity can be reformed by introducing tapered DBR structures. This new hybrid pillar cavity can be diminished to have a sub-micrometer diameter, giving small mode volume and ensuring single QD emission. With quality (Q)fa ct orashi ghas 10 5-10 6 , this cavity can behave as a coherently controllable quantum device. More effective might be the InGaAsP/InP-air-aperture micropillar cavity, which can be fabricated by a monolithic process without hybridizing.