2012
DOI: 10.1364/josab.29.000a55
|View full text |Cite
|
Sign up to set email alerts
|

Effect of atomic layer deposition on the quality factor of silicon nanobeam cavities

Abstract: In this work we study the effect of thin-film deposition on the quality factor (Q) of silicon nanobeam cavities. We observe an average increase in the Q of 38 31% in one sample and investigate the dependence of this increase on the initial nanobeam hole sizes. We note that this process can be used to modify cavities that have larger than optimal hole sizes following fabrication. Additionally, the technique allows the tuning of the cavity mode wavelength and the incorporation of new materials, without significa… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
11
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
6
2
1

Relationship

2
7

Authors

Journals

citations
Cited by 16 publications
(11 citation statements)
references
References 19 publications
0
11
0
Order By: Relevance
“…First, the ALD layer has a well‐controlled and uniform thickness and, therefore, results in a surface as smooth as it was prior to deposition. Indeed, it has been shown experimentally that ALD coating does not decrease the quality factor of photonic crystal cavities . Moreover, the refractive index of Al 2 O 3 is much lower than GaAs.…”
Section: Ald Passivationmentioning
confidence: 99%
“…First, the ALD layer has a well‐controlled and uniform thickness and, therefore, results in a surface as smooth as it was prior to deposition. Indeed, it has been shown experimentally that ALD coating does not decrease the quality factor of photonic crystal cavities . Moreover, the refractive index of Al 2 O 3 is much lower than GaAs.…”
Section: Ald Passivationmentioning
confidence: 99%
“…For example, by expanding the IL laser beams to a wider angle or by shaping the beam profile to a more uniform distribution, spatial power distribution will become uniform, and spatial variation of the pattern will be decreased. Post-process thin dielectric film coating using atomic layer deposition might also improve Q [26]. Furthermore, the fabrication and measurement schemes presented in this paper can be universally used for other materials, structures, or purposes such as a hard mask for III-V semiconductor materials.…”
Section: Resultsmentioning
confidence: 99%
“…Nevertheless, recent researches demonstrate that, when some suitable etchant and/or surface passivation are used, a wetetched InP-based nanopillar presents nice optical properties [49]. A sophisticated wet-etching process would have only a minor effect on the quality of a nanocavity [50]. Furthermore, it is worth noting that InP/InGaAsP materials have a relatively low surface recombination velocity than GaAs/AlGaAs materials [51].…”
Section: The Vertical Distribution Patterns Inmentioning
confidence: 99%