Effect of Ar annealing temperature on SiO2/SiC:SiO2densification change causing leakage current reduction

Zhong, Zhiqin; Sun, Zi Jiao; Wang, Shu Ya; Dai, Li; Zhang, Guo Jun

doi:10.1051/epjap/2013120491

Cited by 5 publications

(5 citation statements)

References 27 publications

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“…Therefore, the EOT is about 1.09 and 1.15 nm for the ZO and ZB samples, respectively. Notice that the J g (1.5 × 10 –5 A/cm 2 ) of ZB is ∼3 orders of magnitude lower than that of the ZO sample (9.2 × 10 –3 A/cm 2 ), which might result from the film densification caused by the ALB treatment . In addition, energy transfer from the He/Ar plasma facilitates the adatom migration on the surface, which might reduce the amount of oxygen vacancies in the ZrO 2 layer.…”

Section: Resultsmentioning

confidence: 95%

“…Notice that the J g (1.5 × 10 −5 A/cm 2 ) of ZB is ∼3 orders of magnitude lower than that of the ZO sample (9.2 × 10 −3 A/cm 2 ), which might result from the film densification caused by the ALB treatment. 28 In addition, energy transfer from the He/Ar plasma facilitates the adatom migration on the surface, which might reduce the amount of oxygen vacancies in the ZrO 2 layer. Because the oxygen vacancies give rise to an increase of leakage current, 29 the suppression of oxygen vacancies also contributes to the dramatic decrease in J g of the ZB MOS capacitor.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

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High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

Chang

Lee

Wang

et al. 2019

ACS Appl. Electron. Mater.

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Because the dielectric constant (K), the leakage current density (J g), and the interfacial state density (D it) are critical to high-K gate dielectrics, the layer-by-layer, in situ atomic layer bombardment (ALB) is proposed and explored to enhance these electrical properties in this study. The in situ helium/argon plasma bombardment was performed layer-by-layer in each cycle of atomic layer deposition (ALD) for preparing high-K gate dielectrics. As compared with the untreated high-K layer, the ALB treatment contributes to a significant reduction in J g by ∼3 orders of magnitude, together with an ∼11% increase of K value and a decrease of D it, of high-K gate dielectrics. The suppressed J g and the enhanced K value are ascribed to an increase of film density and a decrease of oxygen vacancies in the ZrO2 layer by the ALB treatment. The atomic annealing effect due to the ALB technique contributes to the decrease of D it. The result demonstrates that the ALD together with the ALB technique is highly effective to further enhance the dielectric properties of nanoscale thin films, which is important and applicable in a variety of fields including nanoelectronic, energy-saving, and biomedical devices.

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Section: Resultsmentioning

confidence: 95%

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

Chang

Lee

Wang

et al. 2019

ACS Appl. Electron. Mater.

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“…On the other hand, the BAP process results in the degradation of the capacitance and J g compared to the H0MOS-C. The improvement of the CET and the J g in the HBAO MOS-C can intuitively be attributed to the film densification, 14,18,34 as revealed clearly in the XRR measurement (Figure 4). The degradation of the dielectric properties of the HBAP MOS-C can be ascribed to the poor material and surface quality according to the previous analyses, as shown in the XRR, XPS, and AFM characterizations.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 88%

Enhancement of Dielectric Properties of Nanoscale HfO₂ Thin Films Via Atomic Layer Bombardment

Yin

Jiang

Lin

et al. 2020

ACS Appl. Electron. Mater.

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The impacts of the atomic layer bombardment (ALB), which is the in situ layer-by-layer inert gas plasma treatment introduced in each atomic layer deposition (ALD) cycle, is explored to enhance the dielectric characteristics of nanoscale HfO2 thin films. Different ion bombardment modes, including the bombardment after precursor (BAP) and the bombardment after oxidant (BAO), were examined in detail to understand the ALB behaviors. In contrast with the detrimental effects caused by the BAP process, the BAO treatment contributes to an about 3-orders-of-magnitude reduction of the leakage current density (J g ) and an about 26% increase of the dielectric constant (K). The suppression of J g and the enhancement of K can be attributed to the densification of thin film caused by the BAO process, as revealed by X-ray reflectivity characterizations. As a result, a low equivalent oxide thickness (∼1.1 nm) and a low J g (6.77 × 10–4 A/cm2) are demonstrated in an ultrathin (∼3 nm) HfO2 high-K gate dielectric prepared by the BAO ALD process. Hence, the ALB treatment is demonstrated as a promising technique to significantly improve the dielectric characteristics of nanoscale thin films, which is critical in semiconductor, energy, and biocompatible applications.

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“…The corresponding thicknesses of the SiO 2 thin film for these 350 °C, 600 °C and 900 °C samples were 86nm, 84.63nm, 88.55nm, as described in the reference [8]. The thickness changes a little and it is not the decisive factor influencing the accumulation capacitance, therefore we consider the effective surface area A as the main factor.…”

Section: Advanced Materials Research Vol 997mentioning

confidence: 99%

Effect of Ar Annealing Temperature on SiO2/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

Zhong

Zheng

Zhang

et al. 2014

AMR

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The authors investigated the effects of annealing in Ar atmosphere at different temperatures (350 °C, 600 °C, and 900 °C) on the thermally oxidized SiO2/4H-SiC interface. A strong correlation between C-related clusters reduction and SiO2/SiC interfacial improvement was observed. The C-related clusters, which were characterized by field-emission scanning electron microscopy, and energy-dispersive spectrometry, can be significantly reduced after annealing at moderate temperature (600 °C). This sample annealed at 600 °C exhibited the best interfacial quality of SiO2/SiC from capacitance–voltage measurement. Based on the studies, improvements in the quality of the SiO2/SiC interface after annealing at 600 °C may be explained by the reduction of C-related clusters during annealing.

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Effect of Ar annealing temperature on SiO₂/SiC:SiO₂densification change causing leakage current reduction

Cited by 5 publications

References 27 publications

High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

Enhancement of Dielectric Properties of Nanoscale HfO₂ Thin Films Via Atomic Layer Bombardment

Effect of Ar Annealing Temperature on SiO<sub>2</sub>/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

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Effect of Ar annealing temperature on SiO2/SiC:SiO2densification change causing leakage current reduction

Cited by 5 publications

References 27 publications

High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

Enhancement of Dielectric Properties of Nanoscale HfO2 Thin Films Via Atomic Layer Bombardment

Effect of Ar Annealing Temperature on SiO<sub>2</sub>/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

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Effect of Ar annealing temperature on SiO₂/SiC:SiO₂densification change causing leakage current reduction

Enhancement of Dielectric Properties of Nanoscale HfO₂ Thin Films Via Atomic Layer Bombardment