Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications

Jha, G.; Roy, Anushree; Dhar, A.; Manna, I.; Ray, S. K.

doi:10.1016/j.physb.2007.06.014

Cited by 9 publications

(5 citation statements)

References 24 publications

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“…These results indicate that the films annealed below 700°C cannot have a good crystallinity. The change in surface morphology with increasing annealing temperature is considered to be the results of an increase in the surface mobility of atoms, which allows the film to decrease its total energy by growing larger grains and decreasing the grain‐boundary area . Figure (b) presents the FESEM morphologies of the surfaces and cross sections of the 0.97NBT–0.03BA films annealed at 725°C with different pyrolysis temperatures.…”

Section: Resultsmentioning

confidence: 99%

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na_0.5Bi_0.5)TiO₃–xBiAlO₃ Lead‐Free Piezoelectric Thin Films

Yao

Shi

et al. 2016

J. Am. Ceram. Soc.

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Lead-free sodium bismuth titanate-aluminate bismuth [0.97 (Na 0.5 Bi 0.5 )TiO 3 -0.03BiAlO 3 ] solid-solution films deposited on (100) Pt/TiO 2 /SiO 2 /Si substrates by a sol-gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2P r of 38 lC/cm 2 and a leakage current density of 10 -7 -10 -6 A/cm 2 (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT-BA films a viable lead-free alternative to the lead-based materials in such as biosensors and ultrasonic transducers. H.-E. Kim-contributing editor Manuscript No. 37322.

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Section: Resultsmentioning

confidence: 99%

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na_0.5Bi_0.5)TiO₃–xBiAlO₃ Lead‐Free Piezoelectric Thin Films

Yao

Shi

et al. 2016

J. Am. Ceram. Soc.

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“…Insulating buffer layers such as CeO 2 , HfO 2 , MgO, ZrO 2 , Al 2 O 3 , Y 2 O 3 , PrO2 and D 2 O 3 [12][13][14][15][16][17][18][19][20] have relatively high dielectric constants (ranging from 15 to 30), low leakage current, good interface characteristics and compatibility with Si device processing; among them HfO 2 is attractive as an insulating buffer layer because of its high thermal stability and high interface quality on silicon, which has led to its wide deployment in novel high-k gate aggressively scaled CMOS devices [21][22][23]. SBT ferroelectric films have been primarily synthesized by the following methods: metalorganic decomposition (MOD) [8,24] pulsed laser ablation [25][26][27] metalorganic chemical vapour deposition (MOCVD) [28], plasma-enhanced metal organic chemical vapour deposition (PEMOCVD) [29,30] and the rf magnetron sputtering technique [31][32][33]. In this paper, we report the role of the HfO 2 layer in the electrical characteristics of rf magnetron sputtered SBT thin film capacitors for FRAM device applications.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi₂Ta₂O₉/HfO₂/Si using HfO₂as buffer layer

Roy¹,

Dhar²,

Bhattacharya³

et al. 2008

J. Phys. D: Appl. Phys.

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Ferroelectric SrBi2Ta2O9 (SBT) thin films have been deposited by the radio-frequency magnetron sputtering technique on bare p-Si as well as on HfO2 insulating buffer p-Si. XRD patterns revealed the formation of a well-crystallized SBT perovskite thin film on the HfO2 buffer layer. The electrical properties of the metal–ferroelectric–insulator–semiconductor (MFIS) structure were characterized by varying thicknesses of the HfO2 layer. The MFIS structure exhibits a maximum clockwise C–V memory window of 1.60 V when the thickness of the HfO2 layer was 12 nm with a lower leakage current density of 6.20 × 10−7 A cm−2 at a positive applied voltage of 7 V. However, the memory window reaches a maximum value of 0.7 V at a bias voltage of ±5 and then decreases due to charge injection in the case of the insulating buffer layer thickness of 3 nm. The density of oxide trapped charges at/near the buffer layer–ferroelectric interface is studied by the voltage stress method. Capacitance–voltage (C–V) and leakage current density (J–V) characteristics of the Al/SBT/HfO2/Si(1 0 0) capacitor indicate that the introduction of the HfO2 buffer layer prevents interfacial diffusion between the SBT thin film and the Si substrate effectively and improves the interface quality. Furthermore, the Al/SBT/HfO2/Si structures exhibit excellent retention characteristics, the high and low capacitance values clearly distinguishable for over 1 h and 30 min. This shows that the proposed Al/SrBi2Ta2O9/HfO2/Si structure is ideally suitable for high performance ferroelectric memories.

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“…SrBi 2 Ta 2 O 9 is considered one of the potential candidates used in FeRAM. [1][2][3][4][5] This material has a bismuth layered perovskite structure with the formula of (Bi 2 O 2 ) 2z -(A m21 B m O 3mz1 ) 22 , where (A m21 B m O 3mz1 ) 22 forms the perovskite structure between (Bi 2 O 2 ) 2z layers. SrBi 2 Ta 2 O 9 possesses several advantages including excellent fatigue resistance, low operating voltage, low leakage current and high signal/noise ratio.…”

Section: Introductionmentioning

confidence: 99%

Densification and dielectric properties of strontium bismuth tantalate ceramics

Huang

2008

Advances in Applied Ceramics

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The effects of B 2 O 3 doping on the sintering processes and dielectric properties of SrBi 2 Ta 2 O 9 were investigated in this study. The sinterability of SrBi 2 Ta 2 O 9 was significantly enhanced by doping B 2 O 3 due to the formation of liquid phase at elevated temperatures. The addition of B 2 O 3 also led to inhibited thermal decomposition and enhanced grain growth of SrBi 2 Ta 2 O 9 . The amount of doped B 2 O 3 was found to substantially influence the dielectric constants of SrBi 2 Ta 2 O 9 ceramics. When a proper amount of B 2 O 3 was added, the dielectric constants greatly increased. For facilitating the densification process and improving the dielectric properties of SrBi 2 Ta 2 O 9 , it is important to control the doping amount of B 2 O 3 .

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Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications

Cited by 9 publications

References 24 publications

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na_0.5Bi_0.5)TiO₃–xBiAlO₃ Lead‐Free Piezoelectric Thin Films

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na_0.5Bi_0.5)TiO₃–xBiAlO₃ Lead‐Free Piezoelectric Thin Films

Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi₂Ta₂O₉/HfO₂/Si using HfO₂as buffer layer

Densification and dielectric properties of strontium bismuth tantalate ceramics

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Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications

Cited by 9 publications

References 24 publications

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na0.5Bi0.5)TiO3–xBiAlO3 Lead‐Free Piezoelectric Thin Films

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na0.5Bi0.5)TiO3–xBiAlO3 Lead‐Free Piezoelectric Thin Films

Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2as buffer layer

Densification and dielectric properties of strontium bismuth tantalate ceramics

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Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na_0.5Bi_0.5)TiO₃–xBiAlO₃ Lead‐Free Piezoelectric Thin Films

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na_0.5Bi_0.5)TiO₃–xBiAlO₃ Lead‐Free Piezoelectric Thin Films

Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi₂Ta₂O₉/HfO₂/Si using HfO₂as buffer layer