2014
DOI: 10.1016/j.physe.2014.05.003
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Effect of annealing temperature on the photocatalytic activity of CdS-modified TNAs/glass nanotube arrays

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Cited by 12 publications
(2 citation statements)
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“…Among them, CdS films have an important role in applications such as light emitting diodes for flat panel displays, transistors for electronic switches [2]. It is known that CdS films can be deposited with either of two different structural phases like the hexagonal close packed (wurtzite) and the face-centred cubic (zinc blende or hawleyite) [3,4]. CdS films have high absorption coefficient and direct band gap material, and its optical band gap values are from 2.30 to 2.44 eV [5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…Among them, CdS films have an important role in applications such as light emitting diodes for flat panel displays, transistors for electronic switches [2]. It is known that CdS films can be deposited with either of two different structural phases like the hexagonal close packed (wurtzite) and the face-centred cubic (zinc blende or hawleyite) [3,4]. CdS films have high absorption coefficient and direct band gap material, and its optical band gap values are from 2.30 to 2.44 eV [5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…The synthesis of free-standing NT films is a promising way to generate NTs without the presence of a Ti metal substrate, resulting in both structure and phase stability up to a high temperature of approximately 600°C [ 23 ] or 700°C [ 24 ], although the fabrication process is tedious and inefficient. By rapid breakdown anodization [ 25 , 26 ], NT bundles in powder form can be prepared.…”
Section: Introductionmentioning
confidence: 99%