Effect of Annealing Temperature on the Operation of Phase-Change Memory

이승윤,; 박영삼,

doi:10.5757/jkvs.2010.19.2.155

Journal of the Korean Vacuum Society

2010

DOI: 10.5757/jkvs.2010.19.2.155

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Effect of Annealing Temperature on the Operation of Phase-Change Memory

이승윤 이승윤¹,

박영삼 박영삼²

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2014

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Formation of Threshold Switching Chalcogenide for Phase Change Switch Applications

Bang¹,

Lee

2014

Applied Science and Convergence Technology

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The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped Ge 2 Sb 2 Te 5 (GST) chalcogenide alloy exhibiting threshold switching property.Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than 200 o C.This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

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Formation of Threshold Switching Chalcogenide for Phase Change Switch Applications

Bang¹,

Lee

2014

Applied Science and Convergence Technology

Self Cite

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show abstract

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Effect of Annealing Temperature on the Operation of Phase-Change Memory

Cited by 1 publication

References 3 publications

Formation of Threshold Switching Chalcogenide for Phase Change Switch Applications

Formation of Threshold Switching Chalcogenide for Phase Change Switch Applications

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