Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Kaya, Şenol

doi:10.3906/fiz-1812-16

Cited by 12 publications

(3 citation statements)

References 42 publications

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“…Compared to the photo response of ~800 for visible illumination (443 nm), the UV response was ~12 times higher, resulting in a high UV/visible rejection ratio. This can be attributed to the tetrapod-shaped ZnO network surface, which was more sensitive to UV illumination compared to the visible region [ 64 ].…”

Section: Resultsmentioning

confidence: 99%

Multifunctional Three-in-One Sensor on t-ZnO for Ultraviolet and VOC Sensing for Bioengineering Applications

Nagpal,

Lupan,

Bîrnaz

et al. 2024

Biosensors

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Zinc oxide (ZnO) is considered to be one of the most explored and reliable sensing materials for UV detection due to its excellent properties, like a wide band gap and high exciton energy. Our current study on a photodetector based on tetrapodal ZnO (t-ZnO) reported an extremely high UV response of ~9200 for 394 nm UV illumination at 25 °C. The t-ZnO network structure and morphology were investigated using XRD and SEM. The sensor showed a UV/visible ratio of ~12 at 25 °C for 394 nm UV illumination and 443 nm visible illumination. By increasing the temperature, monotonic decreases in response and recovery time were observed. By increasing the bias voltage, the response time was found to decrease while the recovery time was increased. The maximum responsivity shifted to higher wavelengths from 394 nm to 400 nm by increasing the operating temperature from 25 °C to 100 °C. The t-ZnO networks exhibited gas-sensing performances at temperatures above 250 °C, and a maximum response of ~1.35 was recorded at 350 °C with a good repeatability and fast recovery in 16 s for 100 ppm of n-butanol vapor. This study demonstrated that t-ZnO networks are good biosensors that can be used for diverse biomedical applications like the sensing of VOCs (volatile organic compounds) and ultraviolet detection under a wide range of temperatures, and may find new possibilities in biosensing applications.

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Section: Resultsmentioning

confidence: 99%

Multifunctional Three-in-One Sensor on t-ZnO for Ultraviolet and VOC Sensing for Bioengineering Applications

Nagpal,

Lupan,

Bîrnaz

et al. 2024

Biosensors

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“…The Al front contact material was grown via DC sputtering onto last piece of film surface with using with a shadow mask having 1.0 mm diameter circular dots. Whole back side of the MOS capacitors was coated with Silver paint in order to obtain Ohmic type behavior with low resistivity (approximately few μohm-cm) which may decrease the possible signal loses and removes the possible potential barrier between the electrode and semiconductor interface [32]. Schematic structure of the fabricated capacitors is illustrated in figure 1.…”

Section: Methodsmentioning

confidence: 99%

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

Kaya¹,

Yılmaz²

2019

Semicond. Sci. Technol.

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Frequency dependent electrical characteristics of Al/Dy 2 O 3 /p-Si/Ag MOS capacitors have been systematically investigated incorporating interfacial chemical structures of the capacitors to specify where interface state signals arise from. The results show that capacitance (C) increases with decreasing in the applied voltage frequency due to the response time dependency of the interface states. Conductance (G) curves have a single peak at the relatively high frequencies as expected. Interestingly, the G curves exhibit two distinct peaks at 400 kHz and lower frequencies. These G peaks are associated with acceptor-like interface (D it,ac ) and donor-like interface (D it,dn ) states. Electrochemical analysis has also depicted that non-stoichiometric DySiO x and SiO x bonds are present at the interface between Dy 2 O 3 /Si gate stack. Owing to interactions between mobile charge carriers and possible defect sites present at the DySiO x and SiO x , the D it,ac and D it,dn signals have been observed at G curves. In addition, the C hysteresis loop widths decrease with decreasing in the voltage frequencies due to opposite polarity and response time dependencies of the D it,ac and D it,dn states. The oxide, interface and border trap densities of capacitors exhibit slight frequency variations and their orders are comparable with device used in the state of the art microelectronics technologies. On the other hand, barrier potential varies from 0.97 eV to 1.136 eV depending on the voltage frequencies. Leakage current density was found to be 1.61×10 −7 Acm −2 at −1 V and Fowler-Nordheim tunneling mechanism dominates the leakage current conduction. Considering to these results, it can be concluded that the Dy 2 O 3 shows promising dielectric and insulating behavior for the application in future microelectronics technology.

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“…ZnO nanostructures have a wide range of applications in various devices. ZnO nanorods (NR ZnO) are interesting for their electronic and optoelectronic properties [2,3] and are often functional elements of such devices as ultraviolet (UV) nanolasers, chemical sensors, solar cells, nanogenerators [4,5]. The creation of UV sensors of surface acoustic waves (SAW) based on zinc oxide nanostructures as sensitive elements is a very urgent task; they are promising for economical wireless and batteryless devices [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Some Properties of Semiconductor-Ferroelectric Structures

Azamatov,

Utamuradova,

Yuldoshev

et al. 2023

East Eur. J. Phys.

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This paper presents the properties of semiconductor-ferroelectric structures consisting of ZnO nanorods grown at low temperatures by the hydrothermal method on LiNbO3 and LiNbO3:Fe substrates. The resulting structures were analyzed by scanning electron microscope, photoluminescence, and spectrophotometry. SEM images and spectra, absorption spectra, and photoluminescence spectra in the ultraviolet and visible ranges are presented. The studies have shown the possibility of using, along with others, the hydrothermal method for synthesizing Zn(NO3)26H2O and C6H12N4 to obtain arrays of ZnO nanorods as a sensitive element of surfactant-based UV radiation sensors.

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Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Cited by 12 publications

References 42 publications

Multifunctional Three-in-One Sensor on t-ZnO for Ultraviolet and VOC Sensing for Bioengineering Applications

Multifunctional Three-in-One Sensor on t-ZnO for Ultraviolet and VOC Sensing for Bioengineering Applications

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

Some Properties of Semiconductor-Ferroelectric Structures

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