Effect of annealing temperature on the phase transition, band gap and thermoelectric properties of Cu₂SnSe₃

Abstract

The electrical conductivity of the cubic phase, which is larger than that of the monoclinic phase, and similar thermal conductivities of the two phases lead to the higher ZT of the cubic Cu2SnSe3.

Origin of a Simultaneous Suppression of Thermal Conductivity and Increase of Electrical Conductivity and Seebeck Coefficient in Disordered Cubic Cu 2 ZnSnS 4

“…5(a) and 5(b)] do not match with the experimental results. This is expected as the GGA of the exchange-correlation functional is known to strongly underestimate the band gap [8,39]. Although the DFT representation in Fig.…”

Band Offsets, Optical Conduction, and Microwave Band Filtering Characteristics of γ‐In2Se3/CuO Heterojunctions

“…At the same time as the ionic radius of Cu (0.73 [ 12 ] ) is smaller than that of In, Cu can also occupy vacant sites of In (0.94 Å [ 13 ] ) at the ultrathin surface. In addition, the bond lengths of In—In, Se—Se, Cu—Cu, In—Se, Cu—Se, Cu—O, and In—O are 2.82, [ 14 ] 2.37, [ 15 ] 3.64, [ 16 ] 2.68, [ 17 ] 2.46, [ 18 ] 1.85, [ 19 ] and 2.16 Å, [ 20 ] respectively. When comparing bond lengths for In—Se and In—O one finds that the bond length for In—Se is larger than the bond length of In—O.…”

Existence of Partially Degenerate Electrical Transport in Intermetallic Cu2SnSe3 Thermoelectric System Sintered at Different Temperatures

“…Cu 2 SnSe 3 exists in different allotropic forms, viz. cubic, monoclinic, and orthorhombic [4,5] depending on the changes in arrangement of atoms caused by the synthesis methods. Previous studies on the band structure calculations have revealed that they have narrow band gap in the range 0.1-1.7 eV [4][5][6].…”

“…cubic, monoclinic, and orthorhombic [4,5] depending on the changes in arrangement of atoms caused by the synthesis methods. Previous studies on the band structure calculations have revealed that they have narrow band gap in the range 0.1-1.7 eV [4][5][6]. Various attempts have been done to enhance the TE performance via modifying electron and phonon transports through doping, non-stoichiometry and composites [1,[7][8][9].…”

“…Various attempts have been done to enhance the TE performance via modifying electron and phonon transports through doping, non-stoichiometry and composites [1,[7][8][9]. Different methods like conventional solid-state reaction [8], fast combustion synthesis [10], liquid phase reactive sintering [6], spark plasma sintering [11], direct fusion of precursors [12], melt quenching [4] have been tried for synthesis of good quality bulk Cu 2 SnSe 3 polycrystalline materials. Siyar et al [4] has analysed the effect of annealing on high temperature thermoelectric properties (300-600 K) of Cu 2 SnSe 3 synthesized using melt quenching method.…”