Effect of Annealing Temperature on The Refrective Index and Dielectric Properties of TiO2/MnO2 CORE/SHELL Thin Films

Agbo, P. E.

doi:10.24297/jap.v6i3.1756

Cited by 1 publication

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“…This could be attributed to the bumping of the electrons to the conduction band by thermal annealing and in doing so leaves a hole in the valance band. The decrease in the resistivity with temperature is mainly regarded as due to the thermally activated mobility of the carriers (eand e + ) [45]. On the other hand, ''the conductivity of a semiconductor is determined by availability of free carrier concentrations and carrier mobility, while temperature is a measure of the average kinetic energy of the particles of a material, its follows that both carrier concentration, carrier mobility and electrical resistivity are sensitive to temperature''.…”

Section: Resultsmentioning

confidence: 99%

Structural, optical and electrical properties of sulphide based heterojunction thin film

Obot¹,

Augustine²,

Chikwenze³

et al. 2023

JOR

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This contribution presents structural, optical and electrical properties of PbS/CdS thin films at different annealing temperatures. The XRD analysis reveal the existence of three different crystalline phases, i.e., the beta-CdS, hawleyite-CdS and greenockite-alpha-CdS phases within the CdS-shell of PbS/CdS core shell thin film. The dislocation density and microstrain decreased with annealing temperatures indicating a decrease in lattice imperfections and formation of high quality film and it can be attributed to the increase in grain size of the film with increase in annealing temperatures. Optical studies placed the band gaps at 1.25eV-1.75eV. About the same magnitude were found from electrical conductivity test. The samples exhibited high conductivity with increasing annealing temperatures which resulted to the bumping of electrons from the valence band to the conduction band. The high absorbance suggest that the film could be coated on collectors to enhance solar energy collection. The achieved band gaps placed the PbS/CdS fabricated with the presented method as a good material for solar photovoltaic applications.

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Section: Resultsmentioning

confidence: 99%