2017
DOI: 10.1016/j.jallcom.2017.04.230
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Effect of annealing temperature on the growth of Zn-Sn-O nanocomposite thin films

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Cited by 20 publications
(8 citation statements)
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“…The variation optical properties can be attributed to the structural differences that occurred at the high annealing temperature, leading to the formation of the new ZnSnO 3 phase. These values of high transparency obtained in case of ZTO are noteworthy for its use in optoelectronic devices [29]. The optical gap can be obtained with the help of the following relation [30]:…”
Section: Resultsmentioning
confidence: 82%
See 1 more Smart Citation
“…The variation optical properties can be attributed to the structural differences that occurred at the high annealing temperature, leading to the formation of the new ZnSnO 3 phase. These values of high transparency obtained in case of ZTO are noteworthy for its use in optoelectronic devices [29]. The optical gap can be obtained with the help of the following relation [30]:…”
Section: Resultsmentioning
confidence: 82%
“…Finally, much grown and oval shaped grains distributed on the surface have been found to grow for ZTO1000 sample and this change also accompanies with the rearrangement of the grains or the phase transformation from Zn 2 SnO 4 to ZnSnO 3 phase. Yuan et al have also reported the growth of crystallite size with annealing temperature [29]. Figure 3 shows the 2D AFM images for the different samples.…”
Section: Resultsmentioning
confidence: 86%
“…6a and b illustrate the supercells and the determined density of states (DOS) and partial density of states (PDOS) of ZnSnO 3 . 67 The energy band at [−18.4, −15.3] eV in the VB is largely lled by O 2s states interspersed with few Sn 4d levels. The energy range of approximately [−8.1, −5.5] eV displays bands that can be attributed to the presence of Sn 5s states, together with a combination of O 2p and Zn 3d states.…”
Section: Crystal Structure and Physical Propertiesmentioning
confidence: 99%
“…gap result for comparison, it is important to note that DFT oen underemphasizes the energy gap of semiconductor solids 67,68. …”
mentioning
confidence: 99%
“…Zinc stannate is a non-toxic transparent n-type semiconducting oxide material whose electrical conductivity is sensitive to the changes of oxygen stoichiometry and environmental atmosphere, so it is mostly known for its gas-sensing (detection of combustion gases, CO, H 2 , NO, NO 2 , and moisture) applications [1][2][3]. However, the unique electrical and optical properties of the zinc stannate, which has been manufactured so far in different forms (thin and thick films, polycrystalline powders, composite and porous sintered ceramics) [4][5][6][7], makes it a suitable material for the various other applications as well (as functional coatings, flat panel displays, thin film solar cells, windows coatings, transparent conducting electrodes, as anode material in Li-ion batteries, as various photoelectrical devices, in photocatalysis) [8][9][10][11][12][13][14][15][16][17][18][19][20]. Zinc stannate is a spinel compound with a general formula Zn 2 SnO 4 and a band gap of 3.6 eV.…”
Section: Introductionmentioning
confidence: 99%