Effect of annealing temperature on crystallographic texture, magnetic and microwave properties of barium ferrite thin films

Abstract

Due to it has large saturation magnetization (Ms), high magnetocrystalline anisotropy field and high ferromagnetic resonance (FMR) frequency. Barium ferrite (BaM) has attracted more and more attentions in the fields of magnetic recording media, permanent magnets and microwave devices. Here, BaM thin films were deposited on Pt-coated Si substrate, and the effect of annealing temperature on the microstructure and magnetic and microwave properties of barium ferrite thin films in detail. It is found that when the BaM thin film was annealed at 1035°C, it has good properties. The XRD data provide clear evidence that the BaM thin films have high c-axis orientation, and the Lotgering factor is as high as 0.96. The AFM morphology show that BaM grains are out of the film plane, and there are hexagonal. The magnetic hysteresis curves indicated that Both saturated magnetization (4πMs), remanence ratio and OP coercive (Hc) increase with increasing Ta, and get the maximum value at 1035 °C. The ferromagnetic resonance (FMR) measurement show that the FMR linewidth is 143 Oe@50 GHz, it means that this this sample has low microwave loss in millimeter wave loss. These results make sure that this BaM thin film is possible use in millimeter wave devices such as filers, circulators and isolators.