Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

Pastor, A. A.; Prokhorova, U. V.; Serdobintsev, P. Yu.; Chaldyshev, V. V.; Yagovkina, M. A.

doi:10.1134/s1063782613080150

Cited by 12 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When defects are mostly eliminated the important role of the buffer is limitation of electronic transport from the InAs QDs to the continuum of states in LT‐GaAs. These states are known to have a broad energy distribution and ultrashort relaxation time in the range of hundreds of fs . Our analysis shows that the set of related phenomena can be consistently described in terms of the quantum‐mechanical model with geometrical parameters taken from TEM.…”

Section: Discussionmentioning

confidence: 73%

“…The important difference of BP2251 from the reference sample is proximity of the LT‐GaAs layer. The latter is known to have a very short lifetime of non‐equilibrium carriers due to a very high density of the excess‐arsenic‐related point defects . It should be noted that the low‐temperature overgrowth does not make any noticeable changes in the atomic structure of the underlying GaAs buffer and QDs grown at much higher temperature.…”

Section: Discussionmentioning

confidence: 99%

“…While MBE‐grown In(Ga)As QDs buried in GaAs can exhibit a long‐term storage of excitons and spins, the MBE also provides a GaAs‐based materials with very fast switching capability due to extremely short lifetime of non‐equilibrium charge carriers . For that the GaAs‐based structure should be grown by MBE at low temperature (LT).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Kosarev

Берт

Неведомский

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

Optical and structural study of a system of InAs quantum dots (QDs) buried under low‐temperature (LT) grown GaAs layers with different buffer layers in between has been performed. It has been shown that the buffer is very important for both atomic structure and electronic processes. The direct overgrowth at low temperature causes the formation of misfit dislocation and related drop of the photoluminescence (PL) intensity from the InAs QDs. The defect formation is eliminated by using either 5 nm thick GaAs or combined AlAs/GaAs buffer. Strong changes in the QD‐related PL intensity and line shape are experimentally revealed in the case of thin GaAs buffer. These changes are quantitatively described in terms of electron tunneling from the InAs QDs through the GaAs barrier to the continuum of states in the LT‐GaAs. When a 2.5 nm thick portion of the GaAs buffer is substituted by AlAs, the barrier becomes nontransparent for the electron tunneling from the ground states in the InAs QDs. As a result, the QD‐related PL becomes much stronger and the line shape becomes similar to that from the reference sample in the photon energy range of ground state transitions.

show abstract

Section: Discussionmentioning

confidence: 73%

Section: Discussionmentioning

confidence: 99%