Effect of annealing on the thermoelectricity of indium tin oxide thin film thermocouples

Jin, Xinhang; Ma, Binghe; Zhao, Keli; Zhang, Zexun; Deng, Jinjun; Luo, Jian; Yuan, Weizheng

doi:10.1016/j.ceramint.2019.10.190

Cited by 22 publications

(5 citation statements)

References 30 publications

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“…According to reports, O 2 in the solution can serve as an oxidant to transform Sn 2+ into Sn 4+ , 56 and the annealing process in air can also convert Sn 2+ to Sn 4+ . 57 In addition, researchers have verified that SnO 2 is possibly obtained when using SnCl 2 Á2H 2 O as a tin source. [58][59][60] It has been widely proposed that tin ions with a higher oxidation state can increase the electron concentration of the film because of the following process: 40,57 Sn 2+ -Sn 4+ + 2e À .…”

Section: Resultsmentioning

confidence: 99%

“…57 In addition, researchers have verified that SnO 2 is possibly obtained when using SnCl 2 Á2H 2 O as a tin source. [58][59][60] It has been widely proposed that tin ions with a higher oxidation state can increase the electron concentration of the film because of the following process: 40,57 Sn 2+ -Sn 4+ + 2e À . We also found that oxygen vacancies, which act as electron donors, show the same trend as that of the Sn 4+ content.…”

Section: Resultsmentioning

confidence: 99%

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Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

et al. 2023

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

et al. 2023

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“…It can be seen that the average grain size is in the range of 13–15 nm. The 2θ angle corresponding to the main (222) peak shifted with prolonged holding time, which may be related to lattice distortion caused by the substitution of In 3+ ions (0.079 nm) by Sn 4+ ions (0.069 nm) or Sn 2+ ions (0.093 nm) [ 20 ]. In addition, the 2θ angle corresponding to the (222) peak of the ITO film obtained using RIA technology is slightly smaller than that obtained by CFA.…”

Section: Resultsmentioning

confidence: 99%

Different Crystallization Behavior of Amorphous ITO Film by Rapid Infrared Annealing and Conventional Furnace Annealing Technology

Jiang

et al. 2023

Materials

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An amorphous indium tin oxide (ITO) film (Ar/O2 = 80:0.5) was heated to 400 °C and maintained for 1–9 min using rapid infrared annealing (RIA) technology and conventional furnace annealing (CFA) technology. The effect of holding time on the structure, optical and electrical properties, and crystallization kinetics of ITO films, and on the mechanical properties of the chemically strengthened glass substrates, were revealed. The results show that the nucleation rate of ITO films produced by RIA is higher and the grain size is smaller than for CFA. When the RIA holding time exceeds 5 min, the sheet resistance of the ITO film is basically stable (8.75 Ω/sq). The effect of holding time on the mechanical properties of chemically strengthened glass substrates annealed using RIA technology is less than that of CFA technology. The percentage of compressive-stress decline of the strengthened glass after annealing using RIA technology is only 12–15% of that using CFA technology. For improving the optical and electrical properties of the amorphous ITO thin films, and the mechanical properties of the chemically strengthened glass substrates, RIA technology is more efficient than CFA technology.

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“…Indium tin oxide (ITO) and indium oxide (In 2 O 3 ) materials were selected as thermoelectric materials. These materials have a greater thermoelectric output than conventional metallic thermocouples 41 , 42 , maintain chemical stability at high and low temperatures 43 , 44 and have a Seebeck coefficient of up to 224 μV/°C 45 . The preparation of the thermopile was carried out using screen printing.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive flexible heat flux sensor based on a microhole array for ultralow to high temperatures

Li,

Tian,

Zhang

et al. 2023

Microsyst Nanoeng

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With the growing demand for thermal management of electronic devices, cooling of high-precision instruments, and biological cryopreservation, heat flux measurement of complex surfaces and at ultralow temperatures has become highly imperative. However, current heat flux sensors (HFSs) are commonly used in high-temperature scenarios and have problems when applied in low-temperature conditions, such as low sensitivity and embrittlement. In this study, we developed a flexible and highly sensitive HFS that can operate at ultralow to high temperatures, ranging from −196 °C to 273 °C. The sensitivities of HFSs with thicknesses of 0.2 mm and 0.3 mm, which are efficiently manufactured by the screen-printing method, reach 11.21 μV/(W/m2) and 13.43 μV/(W/m2), respectively. The experimental results show that there is a less than 3% resistance change from bending to stretching. Additionally, the HFS can measure heat flux in both exothermic and absorptive cases and can measure heat flux up to 25 kW/m2. Additionally, we demonstrate the application of the HFS to the measurement of minuscule heat flux, such as heat dissipation of human skin and cold water. This technology is expected to be used in heat flux measurements at ultralow temperatures or on complex surfaces, which has great importance in the superconductor and cryobiology field.

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Effect of annealing on the thermoelectricity of indium tin oxide thin film thermocouples

Cited by 22 publications

References 30 publications

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Different Crystallization Behavior of Amorphous ITO Film by Rapid Infrared Annealing and Conventional Furnace Annealing Technology

Highly sensitive flexible heat flux sensor based on a microhole array for ultralow to high temperatures

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Effect of annealing on the thermoelectricity of indium tin oxide thin film thermocouples

Cited by 22 publications

References 30 publications

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

Different Crystallization Behavior of Amorphous ITO Film by Rapid Infrared Annealing and Conventional Furnace Annealing Technology

Highly sensitive flexible heat flux sensor based on a microhole array for ultralow to high temperatures

Contact Info

Product

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About

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer