Graphitic carbon nitride (g-C 3 N 4) started to be thoroughly studied in recent decade because of its photocatalytic properties [1,2] and promising potential for production of hydrogen and hydrocarbon fuel. [3] An effective light absorption in the visible range makes this organic semiconductor (E g ¼ 2.70-2.88 eV room temperature) [1,2] to be very attractive for combination with wide bandgap inorganic semiconductors to get an increased photocatalytic activity supposing Z-scheme transfer of photogenerated charge carriers in composite heterostructures which could be also useful for novel light-emitting devices. [4] However, the synthesis of g-C 3 N 4 heterojunction systems usually consists of multiple steps intended to construct multilayered or core-shell-like structures and includes many intermediate operations. Fabrication of composites based on g-C 3 N 4 and wide bandgap semiconductors is a reasonable strategy to achieve good catalytic performance of the materials without using expensive noble or rare metals. [2,5] Energy positions of conduction band (CB) and valence band (VB) edges in ZnO, TiO 2 , ZrO 2 , ZnS, SiC, and some ternary semiconductor compounds at normal pH is "lucky" enough to maintain efficient heterogeneous photocatalysis. [6] Meanwhile, photocatalysis is not the only application area for g-C 3 N 4. Scientific community in a pursuit of perfect photocatalyst almost ignored using g-C 3 N 4 as a light-emitting material despite its bright wide range luminescence. There are some attempts undertaken to fabricate white light-emitting devices using this material as a luminophore, combining it with oxides (silica), [7] semiconductors (ZnO), [8] phosphorus (Y 2 MoO 6 :Eu 3þ), [9] and organic compounds (2-aminothiophene-3-carbonitrile). [10] Both in the attempts to obtain efficient photocatalytic coatings or light-emitting devices to unleash the potential of g-C 3 N 4 fabrication of multicomponent systems consisting of g-C 3 N 4 itself and complimentary wide bandgap semiconductors are needed. Semiconducting ZnO (E g ¼ 3.37 eV) [6] and ZnS (E g ¼ 3.54 eV) [6] suit well to construct binary or ternary heterogeneous systems including g-C 3 N 4. Among others such composites were claimed to possess better photocatalytic and photovoltaic properties. [1,11,12] Meanwhile note that the proposed fabrication process is complicated and time consuming: each compound was synthesized individually and then they were mixed to obtain semiconductor particles decorated with g-C 3 N 4 flakes. [11,12] Moreover, the produced composites have remained poorly studied. Herein, we describe a new facile approach for synthesis of ternary g-C 3 N 4-based heterojunction composites promoting our previous experimental techniques. [13-15] It exploits the idea to synthesize interconnecting g-C 3 N 4 , semiconducting metal oxide and metal sulfide by pyrolytic decomposition of thiourea and metal acetate in their mixture followed by in situ chemical interaction and polymerization of the products. Thiourea provides tri-s-triazine units for construc...