Effect of annealing on structure and properties of Ta–O–N films prepared by high power impulse magnetron sputtering

Čapek, Jiří; Batková, Šárka; Haviar, Stanislav; Houška, Jiří; Čerstvý, R.; Zeman, Petr

doi:10.1016/j.ceramint.2018.09.019

Cited by 11 publications

(4 citation statements)

References 27 publications

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“…For oxygen flow to increase to higher than 0.25 sccm, the oxynitride starts to form. Gaussian fit yields very complicated crystal structures with a large number of crystal planes (TaON, ICCD PDF 70-1193 and 71-0178) [37,38]. The signature peaks for tantalum oxynitrides are (-1,1,1), (1,1,1), and the tri-peaks are (0,0,2), (0,2,0), (2,0,0).…”

Section: Xrdmentioning

confidence: 99%

“…For electrical resistivity, our crystalline tantalum oxynitride samples present values of 1×10 -2 -5.9×10 1 Ω cm. The amorphous tantalum oxynitride (Ta-O-N) films are ~4×10 -1 Ω cm in [38]; Ta-N-O thin films by reactive co-sputtering under partial pressure ratio PO/(PO+PN) = 0.22-0.79 is between 2.88×10 -4 and 1.15×10 4 Ω cm in [42]; TaON epitaxial thin films is 1×10 -2 Ω cm in [43]; tantalum oxynitride thin films by r.f. reactive magnetron sputtering is 4×10 -4 -1×10 -3 Ω cm in [44]; TaON films deposited at 2500 W and annealed at 500 °C in N2 exhibited resistivity 4.6×10 -4 Ω cm [45].…”

Section: Electrical and Optical Characters Comparisonmentioning

confidence: 99%

“…The gap between the two bands is within 1.87-2.08 eV. The amorphous tantalum oxynitride (Ta-O-N) films in [38] [46]. In fact, most tantalum oxynitrides have bandgaps between 1.9 and 2.5 eV [1, 3,47].…”

Section: Electrical and Optical Characters Comparisonmentioning

confidence: 99%

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Experimental Investigation on the Sputtering Process for Tantalum Oxynitride Thin Films

Hsieh

Chuang

2021

Photonics

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Metal oxynitrides are compounds between nitrides and oxides with a certain level of photocatalytic functions. The purpose of this study is to investigate an appropriate range of oxygen flow rate during sputtering for depositing tantalum oxynitride films. The sputtering process was carried out under fixed nitrogen but variable oxygen flow rates. Post rapid thermal annealing was conducted at 800 °C for 5 min to transform the as-deposited amorphous films into crystalline phases. The material characterizations of annealed films include X-ray diffraction and Raman spectroscopy for identifying crystal structures; scanning electron microscope for examining surface morphology; energy-dispersive X-ray spectroscopy to determine surface elemental compositions; four-point probe and Hall effect analysis to evaluate electrical resistivity; UV-visible-NIR spectroscopy for quantifying optical properties and optical bandgaps. To assess the photocatalytic function of oxynitride films, the degradation of methyl orange in de-ionized water was examined under continuous irradiation by a simulated solar light source for six hours. Results indicate that crystalline tantalum oxynitride films can be obtained if the O2 flow rate is chosen to be 0.25–1.5 sccm along with 10 sccm of N2 and 20 sccm of Ar. In particular, films deposited between 0.25 and 1.5 sccm O2 flow have higher efficiency in photodegradation on methyl orange due to a more comprehensive formation of oxynitrides.

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Section: Xrdmentioning

confidence: 99%

Section: Electrical and Optical Characters Comparisonmentioning

confidence: 99%

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Experimental Investigation on the Sputtering Process for Tantalum Oxynitride Thin Films

Hsieh

Chuang

2021

Photonics

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“…β-TaON films can be synthesised by several preparation methods, including sputtering [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25], nitridation of Ta 2 O 5 films by ammonolysis [1,3,[26][27][28] or pulsed laser deposition [29]. Magnetron sputtering of a Ta target under reactive O 2 + N 2 atmosphere provides several benefits.…”

Section: Introductionmentioning

confidence: 99%

$ \newcommand{\bt}{\beta} \bt$ -TaON thin films: production by reactive magnetron sputtering and the question of non-stoichiometry

Salamon

Mičetić

Sancho‐Parramon

et al. 2019

J. Phys. D: Appl. Phys.

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In this work we report on the structure, morphology, composition, chemical bonding and optical properties of tantalum oxynitride (Ta-O-N) thin films prepared by reactive direct current magnetron sputtering. The films have been investigated by grazing incidence x-ray diffraction, x-ray reflectivity, grazing incidence small angle x-ray scattering, time-offlight elastic recoil detection analysis, x-ray photoelectron spectroscopy and spectroscopic ellipsometry. The composition and the partial pressure of the reactive atmosphere (N 2 + O 2 ) have been varied in order to find conditions suitable for the β-TaON phase production. As prepared thin films are amorphous and annealing at T a 800 °C is necessary to promote crystallization. We discuss the role of N 2 gas on the kinetics of sputtered particles and its influence on the oxidation rate and porosity of the growing film. The anion composition in Ta-O-N films strongly depends on the reactive gas condition during the deposition. We found that the O/N ratio in β-TaON films increases with more N 2 or O 2 gas in the chamber, whereas the corresponding absorption onset and valence band maximum show a blue shift of up to 0.5 eV. These results were related to the non-stoichiometry in β-TaO x N y crystallites with x > y .

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Defect Engineering for Photocatalysis: From Ternary to Perovskite Oxynitrides

Brown

et al. 2020

ChemNanoMat

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Exploiting defects and specific anion non-stoichiometry in mixed-anion semiconductors is a challenge that remains at the forefront of photocatalytic and photoelectrochemical water splitting research. The interplay between of oxygen and nitrogen defects in perovskite oxynitrides specifically creates exciting, yet complex, opportunities for optimizing phase stability, ionic conduction and anion order in these materials. In this Minireview we highlight the recent advances in defect engineering in oxynitride semiconductors, such as anion content/non-stoichiometry, surface modification, cation doping and formation of anisotropic layered structures, on photocatalytic and photoelectrochemical water splitting. Avenues warranting further investigation are discussed.[a] J.

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Effect of annealing on structure and properties of Ta–O–N films prepared by high power impulse magnetron sputtering

Cited by 11 publications

References 27 publications

Experimental Investigation on the Sputtering Process for Tantalum Oxynitride Thin Films

Experimental Investigation on the Sputtering Process for Tantalum Oxynitride Thin Films

$ \newcommand{\bt}{\beta} \bt$ -TaON thin films: production by reactive magnetron sputtering and the question of non-stoichiometry

Defect Engineering for Photocatalysis: From Ternary to Perovskite Oxynitrides

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