Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO₃ Thin Films

Abstract

Present work reports the impact of post deposition annealing on the resistive switching behavior of rf magnetron sputtered WO3 nanostructured thin films. The films were deposited under GLAD configuration of sputtering at varying GLAD angle from 65o to 80o. Structure transition from monoclinic to orthorhombic phase in deposited WO3 films was perceived after ex‐situ annealing at a temperature of 400 oC. Resistive Switching properties show a shift from bipolar to unipolar switching on post deposition annealing. The WO3 nanostructured thin films show the unipolar switching behavior after ex‐situ annealing for all the prepared samples. The value of resistance in high resistance state (HRS) was lowered after ex‐situ heating treatment and interestingly the switching voltage also reduced to 3V from 7V after annealing treatment. The ratio of high to low resistance state for annealed WO3 film fabricated at 70o GLAD angle was achieved to be maximum ( ̴ 219). A detailed charge transport mechanism shows that the ohmic behavior is the dominant current conduction mechanism at lower applied voltage while SCLC and Child’s law are dominant at higher applied voltages. The obtained results encourages the utilization of prepared WO3 thin film samples towards a wide variety of applications in optoelectronics, microelectronics, selective catalytic and environmental engineering along with the advanced electronics such as the resistive memory devices.This article is protected by copyright. All rights reserved.

Dielectric Properties and Carrier Transport Mechanism in Annealed HfOx‐Based Resistive Random Access Memory Devices

“…[ 23 ] However, the study of carrier transport mechanism in HfO x ‐based RRAM devices from the dielectric point of view using AC impedance technology is not yet available. In addition, post annealing technology can effectively improve the RRAM performance, [ 24,25 ] but little research explored the effect of annealing on dielectric properties of HfO x ‐based RRAM devices.…”