Effect of Annealing on Graphene/PVDF Nanocomposites

Samoei, Victor K.; Maharjan, Surendra; Sano, Keiichiro; Jayatissa, Ahalapitiya H.

doi:10.1021/acsomega.3c00283

Cited by 9 publications

(2 citation statements)

References 44 publications

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“…The stability of graphene in thin films depends on factors such as the annealing temperature, the substrate type, and the fabrication process. Annealing can improve the quality of graphene by reducing defects and enhancing its electrical and thermal properties [59]. Similar reports have been found for phototransistors based on two-dimensional graphene nanosheets (GNSs), and amorphous indium−gallium−zinc −oxide (α-IGZO) semiconductors annealed at 600 °C which exhibited excellent thin-film transistor performance [23,60].…”

Section: Effects Of the Graphene Doping For The β-Ga 2 O 3 Tft Devicessupporting

confidence: 69%

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Feria,

Huang,

Yeh

et al. 2024

Nanotechnology

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Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizing β-Ga2O3 via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in X-ray diffraction (XRD) patterns and full surface coverage formation in scanning electron microscopy (SEM) images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesized β-Ga2O3 was fabricated as thin film transistors (TFT). The β-Ga2O3 TFT fabricated exhibits remarkable electron mobility (1.28 cm2/Vs) and a good current ratio (Ion/Ioff) of 2.06×105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene in β-Ga2O3 TFT devices, increasing the electrical device mobility by ~8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that the β-Ga2O3 networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.

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Section: Effects Of the Graphene Doping For The β-Ga 2 O 3 Tft Devicessupporting

confidence: 69%

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Feria,

Huang,

Yeh

et al. 2024

Nanotechnology

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“…It is important to note that these properties can be drastically changed with the change in graphene content. We believe that the p-type conduction is attributed to the oxygen adsorption in graphene [34,35].…”

Section: I-v Characteristic Curve Of Graphene/pvdf Nanocompositementioning

confidence: 90%

Knittle Pressure Sensor Based on Graphene/Polyvinylidene Fluoride Nanocomposite Coated on Polyester Fabric

Maharjan,

Samoei,

Jayatissa

et al. 2023

Materials

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In this paper, a knittle pressure sensor was designed and fabricated by coating graphene/Polyvinylidene Fluoride nanocomposite on the knitted polyester substrate. The coating was carried out by a dip-coating method in a nanocomposite solution. The microstructure, surface properties and electrical properties of coated layers were investigated. The sensors were tested under the application of different pressures, and the corresponding sensor signals were analyzed in terms of resistance change. It was observed that the change in resistance was 55% kPa−1 with a sensitivity limit of 0.25 kPa. The sensor model was created and simulated using COMSOL Multiphysics software, and the model data were favorably compared with the experimental results. This investigation suggests that graphene-based nanocomposites can be used in knittle pressure sensor applications.

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Self‐Powered, Soft and Breathable Human–Machine Interface Based on Piezoelectric Sensors

Jiang,

Zhang,

Kwon

et al. 2024

Advanced Sensor Research

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Wearable electronics revolutionize human–machine interfaces (HMIs) for robotic or prosthetic control. Yet, the challenge lies in eliminating conventional rigid and impermeable electronic components, such as batteries, while considering the comfort and usability of HMIs over prolonged periods. Herein, a self‐powered, flexible, and breathable HMI is developed based on piezoelectric sensors. This interface is designed to accurately monitor subtle changes in body and muscle movements, facilitating effective communication and control of robotic prosthetic hands for various applications. Utilizing engineered porous structures within the polymeric material, the piezoelectric sensor demonstrates a significantly enhanced sensitivity, flexibility, and permeability, highlighting its outstanding HMI applications. Furthermore, the developed control algorithm enables a single sensor to comprehensively control robotic hands. By successfully translating piezoelectric signals generated from bicep muscle movements into Morse Code, this HMI serves as an efficient communication device. Additionally, the process is demonstrated by illustrating the execution of the daily task of “drinking a cup of water” using the developed HMI to enable the control of a human‐interactive robotic prosthetic hand through the detection of bicep muscle movements. Such HMIs pave the way toward self‐powered and comfortable biomimetic systems, making a significant contribution to the future evolution of prosthetics.

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Effect of Annealing on Graphene/PVDF Nanocomposites

Cited by 9 publications

References 44 publications

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Knittle Pressure Sensor Based on Graphene/Polyvinylidene Fluoride Nanocomposite Coated on Polyester Fabric

Self‐Powered, Soft and Breathable Human–Machine Interface Based on Piezoelectric Sensors

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Effect of Annealing on Graphene/PVDF Nanocomposites

Cited by 9 publications

References 44 publications

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Knittle Pressure Sensor Based on Graphene/Polyvinylidene Fluoride Nanocomposite Coated on Polyester Fabric

Self‐Powered, Soft and Breathable Human–Machine Interface Based on Piezoelectric Sensors

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Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides