Effect of annealing in oxygen atmosphere on morphological and electrical properties of iridium and ruthenium thin films prepared by liquid delivery MOCVD

Lisker, Marco; Hur'yeva, Tetyana; Ritterhaus, Yves; Burte, Edmund P.

doi:10.1016/j.surfcoat.2007.04.078

Cited by 22 publications

(18 citation statements)

References 12 publications

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“…The relationship between process parameter and composition of SBT films has been studied in previous work of our group [16]- [18] [24]. The XPS measurements of SBT and BTN films indicated an atomic composition of these films at various processing parameters.…”

Section: Resultsmentioning

confidence: 88%

“…Although perovskite type thin films SBT, BIT, and BTN have been extensively studied, no work on multilayer SBT and Nb 5+ -substituted BiT (BTN) thin films has yet been carried out. Therefore, we deposited SBT/BTN multilayer thin films with different stacking periodicities utilizing metal organic chemical vapor deposition process (MOCVD), optimized in our previous work [16]- [18].…”

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confidence: 99%

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Enhanced ferroelectric properties of multilayer SBT-BTN thin films for NVRAM applications

Khorkhordin

Yeh

Kalkofen

et al. 2016

Integrated Ferroelectrics

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Ferroelectric SrBi2Ta2O9-(Bi4Ti3)1-xNbxO12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C4H9)3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)5(OC2H4OMe)]2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)2(mmp)2] and Niob-ethoxide [Nb(OC2H5)5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800˚C consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization (2•Pr) and coercive field (Ec) are 16.2 μC/cm 2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (2•Pr = 6.4 μC/cm 2 , Ec = 154 kV/cm). In the films prepared above 700˚C, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.

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Section: Resultsmentioning

confidence: 88%

mentioning

confidence: 99%

Enhanced ferroelectric properties of multilayer SBT-BTN thin films for NVRAM applications

Khorkhordin

Yeh

Kalkofen

et al. 2016

Integrated Ferroelectrics

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“…The data in Fig. 8 show that Ni becomes nonconductive after cumulative oxidation (1 h each) to 500 • C, whereas Al is conductive up to 600 • C, Ru and RuAl are conductive up to 800 • C, and NiAl is conductive up to 850 • C. Although Ru and RuAl show similar electrical properties at 800 • C, optical images of Ru (not shown) indicate the possibility of voids at the film surface between 700 • C and 800 • C. This could be due to the volatilization of RuO 3 and RuO 4 , which was suggested to occur between 700 • C and 800 • C in Ru films by Lisker et al [57], who showed that, after Ru films were oxidized completely to the RuO 2 phase, further oxidation resulted in resistivity values higher than the bulk value of RuO 2 . This finding was ascribed to the loss Fig.…”

Section: B Electrical Characterizationmentioning

confidence: 88%

Oxidation of RuAl and NiAl Thin Films: Evolution of Surface Morphology and Electrical Resistance

Howell

Muhlstein

Liu

et al. 2011

J. Microelectromech. Syst.

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RuAl and NiAl thin films on SiO 2 /Si were oxidized, and the results were compared to those from aluminum, ruthenium, and nickel films. Both aluminides are more oxidation resistant than nickel, aluminum, and ruthenium, and they form an outer layer of alumina after oxidation to 850 • C. The depth profiles differ for NiAl and RuAl, with alternating layers of alumina and a Ru-rich phase forming on RuAl, while a more complex structure forms on NiAl due to reaction with the substrate. The surface of RuAl after oxidation remains fairly smooth and reflective, whereas NiAl has a hazy appearance. However, the surface morphology changes at a slightly lower temperature in the case of RuAl (∼500 • C). Both films remain conductive even after the surface begins to show signs of oxidation, with the NiAl remaining conductive to a higher temperature (after 1 h at 850 • C) than RuAl. The results show that NiAl and RuAl films can be used in an oxidizing atmosphere up to ∼500 • C (at least 1 h) for applications requiring a smooth reflective surface and to higher temperatures when the surface quality is less important but conductivity needs to be maintained (∼800 • C for RuAl and ∼850 • C for NiAl).[2010-0241]

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“…Vacuum conditions (pressure: 2.10 À4 mbar) were chosen as both AlN and Ir oxidize above 700 C in air atmosphere. 10,17 The morphology and chemical composition of the investigated devices surface were analyzed by scanning electron microscopy (SEM) coupled to energy-dispersive X-ray spectroscopy (EDXS). Slices of the devices were obtained by focused ion beam etching (FIB) to perform cross-sectional TEM micrographs.…”

Section: Methodsmentioning

confidence: 99%

In situ high-temperature characterization of AlN-based surface acoustic wave devices

Aubert

Bardong

Legrani

et al. 2013

Journal of Applied Physics

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Effect of annealing in oxygen atmosphere on morphological and electrical properties of iridium and ruthenium thin films prepared by liquid delivery MOCVD

Cited by 22 publications

References 12 publications

Enhanced ferroelectric properties of multilayer SBT-BTN thin films for NVRAM applications

Enhanced ferroelectric properties of multilayer SBT-BTN thin films for NVRAM applications

Oxidation of RuAl and NiAl Thin Films: Evolution of Surface Morphology and Electrical Resistance

In situ high-temperature characterization of AlN-based surface acoustic wave devices

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