Effect of anionic concentration on the structural and optical properties of nanostructured ZnS thin films

Safeera, T.A.; Johns, N.; Anila, E.I.

doi:10.1016/j.optmat.2016.03.050

Cited by 15 publications

(4 citation statements)

References 35 publications

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Section: Introductionmentioning

confidence: 99%

“…The films were deposited at 350 °C and exhibited wurtzite structures. [23] They reported the formation of ZnS quantum dots with a wurtzite structure at the same substrate temperature of 350 °C. [24] Zeng et al prepared ZnS thin films using thioacetamide as sulfur source and observed the formation of wurtzite structure at the spray temperature of 310 °C.…”

Section: Introductionmentioning

confidence: 99%

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A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray‐Pyrolysis Technique

Najim

Hartiti

Nkuissi

et al. 2023

Cryst. Res. Technol.

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This study aims at synthesizing zinc sulfide (ZnS) thin films using spray pyrolysis method. The effect of the Zn concentration on the physical properties of ZnS is investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis spectrophotometer, photoluminescence (PL), and Raman spectroscopy. XRD shows a preferential orientation along the (111) direction corresponding to the ZnS cubic structure. Based on the XRD results, it is seen that low zinc concentrations compared to sulfur content can increase the crystalline quality of films. Raman spectra confirm the presence of the ZnS cubic structure observed by XRD and show the presence of sprayed ZnS vibrational modes for all films. PL emission spectrum of ZnS confirms the presence of Zn and S atoms at all molar concentrations. SEM reveals densely packed and uniformly distributed grains with precise shapes. The elemental analysis confirms the growth of stochiometric Zn/S ratio. The optical analysis shows a high transmittance around 88% in the visible range of the solar spectrum with optical band gaps varying from 3.4 to 3.6 eV. These properties are interesting and show that ZnS thin films can be used as buffer layers in thin film solar cells applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray‐Pyrolysis Technique

Najim

Hartiti

Nkuissi

et al. 2023

Cryst. Res. Technol.

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“…These methods include magnetron sputtering, pulsed laser deposition (PLD), metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, electrodeposition, atomic layer deposition (ALD), spray pyrolysis, spin coating, and chemical bath deposition. [13][14][15][16][17][18][19][20][21][22][23][24] Among these methods, magnetron sputter-ing has high efficiency and causes no pollution. Films prepared by magnetron sputtering exhibit good interfacial adhesion with the substrate, high compactness, and can be prepared on a large-area substrate.…”

Section: Introductionmentioning

confidence: 99%

Influence of low-temperature sulfidation on the structure of ZnS thin films

et al. 2019

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ZnS thin films were prepared by sulfuring zinc thin films at different sulfuration temperatures. The crystal structure, surface morphology, defects, and optical properties of the thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), positron annihilation Doppler broadening, and UV-Vis spectrophotometer, respectively. It was found that the (200)-plane preferred orientation of the ZnS thin films changed to (111)-plane with increasing sulfidation temperature. Moreover, a number of large holes were generated at 420 • C and eliminated at 440 • C. The concentration of defects was lowest when the sulfuration temperature was 440 • C. The optical transmission of all samples was maintained at 60%-80% in the wavelength range of 400 nm-800 nm, and the band energy of the ZnS thin films was approximately 3.5 eV for all treatment temperatures except 430 • C.

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“…15) In addition, it is possible for ZnS to emit blue light via defect levels. 12,16,17) Our ultimate goal is to fabricate low-cost light-emitting diodes (LEDs) with ZnS-based materials using mist-CVD. Gallium nitride (GaN)-based LEDs 18,19) are now widely used as white light sources instead of fluorescent lamps.…”

Section: Introductionmentioning

confidence: 99%

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

Okita

Yatabe

Nakamura

2018

Jpn. J. Appl. Phys.

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ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.

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Effect of anionic concentration on the structural and optical properties of nanostructured ZnS thin films

Cited by 15 publications

References 35 publications

A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray‐Pyrolysis Technique

A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray‐Pyrolysis Technique

Influence of low-temperature sulfidation on the structure of ZnS thin films

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

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