Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

Abstract

PEALD of thin SiO2 films assisted by bias is a powerful technique to tailor their physical and chemical properties.

Precise ion energy control with tailored waveform biasing for atomic scale processing

“…Recently, ion energy control during plasma-enhanced atomic layer deposition (ALD) with RF sinusoidal waveform biasing has been demonstrated to enable control over the growth and material properties of thin films. 53,[55][56][57][58] Using the FIG. 6.…”

Antireflection Coating on PMMA Substrates by Atomic Layer Deposition

“…The absorption edge shifts from approximately 200 to 230-240 nm wavelength for the films grown at 100 and 60 • C, respectively. The XPS and Auger electron spectroscopy analysis of SiO 2 thin films grown at 100 • C indicate very low impurity levels of around 0.1% for both N and C [30], whereas the depth profile analysis of nanoporous SiO 2 layers developed at 150 • C also shows low (1%) C impurities [19]. The surface contamination with C due to adsorbed hydrocarbons is significantly larger (approximately 3%) than the impurities in the film.…”

SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

“…39 One approach to decrease the deposition temperature and the level of contamination is to use plasma-enhanced-ALD (PE-ALD). 40,58,59 It is possible to decrease the temperature below 50 C, and these SiO 2 lms are described as excellent candidates for thin lm encapsulation in organic devices or TFT gate insulators due to the absence of impurities and good electrical properties. [41][42][43]60 Currently, the use of amino ligands as precursors leads to promising results, even on large surfaces; however, a nal annealing step at 900-1000 C is required to decrease interface defects or carbon contamination.…”