Effect of ambient gas on pulsed laser deposition of group III nitrides

Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

“…25 In SiGe/Ge grown by MOCVD, the effect of monoatomic hydrogen was remarkable in the early stages of strain relaxation and during subsequent thermal treatment. 26 On pulsed laser depositions using a nitrogen-hydrogen gas, Ito et al 27 found that the PL emission of the grown GaN was increased, an effect that was attributed most likely to the reduction in DTD. In the system InP/GaAs under study, a H plasma was needed to passivate both Zn acceptors and TDs and thus to improve the quality and performance of heteroepitaxial InP-based space solar cells.…”