Effect of Aluminum on the Structural, Optical, Electrical and Photovoltaic Properties of ZnSe/n-Si Heterojunction Solar Cell

Hassun, Hanan K.; Ali, Hiba M.; Hasan, Shaymaa Qasim Abdul; Maki, Samir A.

doi:10.36478/jeasci.2019.4773.4779

Cited by 3 publications

(2 citation statements)

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“…The Φ B0 of the unirradiated n À ZnSe=n À Si IHJ the present study was found to be 0:88eV with η value of 2:28 . Previously, Rashmitha et al [14], Hassun et al [25] and Güzeldir et al [26] have reported Φ B0 (η ) values of 0:957 (1:756 ), 0:825 ( 2:157 ) and 0:779eV (1:217 ) respectively. It is also interesting to note that for n À ZnSe=p À Si heterojunctions, the reported Φ B0 (η ) values are 0:832 (2:910 ) [18] and 0:78eV (3:2 ) [16].…”

Section: Xrd Analysismentioning

confidence: 99%

Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions

Vali

Keshav

Rajeshwari

et al. 2021

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To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientation. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.

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Section: Xrd Analysismentioning

confidence: 99%

Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions

Vali

Keshav

Rajeshwari

et al. 2021

Silicon

View full text Add to dashboard Cite

show abstract

“…The Φ J' of the unirradiated − / − IHJ in the present study was found to be 0.88 with value of 2.28. Previously, Rashmitha et al[14], Hassun et al[25] and Güzeldir et al[26] have reported Φ J' ( ) values of 0.957…”

mentioning

confidence: 99%

Gamma irradiation effects on n-ZnSe/n-Si isotype heterojunctions

Vali

Keshav

Rajeshwari

et al. 2021

Preprint

View full text Add to dashboard Cite

To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientations. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.

show abstract