2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM) 2024
DOI: 10.1109/edm61683.2024.10615105
|View full text |Cite
|
Sign up to set email alerts
|

Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures

Dmitriy D. Bashkatov,
Timur V. Malin,
Vladimir G. Mansurov
et al.
Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 28 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?