Effect of aliovalent substituted highly disordered GeTe compound's thermoelectric performance

Achieving High Carrier Mobility And Thermal Stability in Plainified Rhombohedral GeTe Thermoelectric Materials with zT > 2

“…The remarkably high peak zT values of above 2.0 have been achieved in GeTe-based materials. [44][45][46][47][48][49][50][51][52][53][54] For instance, by band convergence induced by Pb, Bi, and Mn co-doping, an enhanced zT of 2.3 is achieved in the cubic Ge 0.82 Pb 0.1 Bi 0.04 Mn 0.04 Te at 573 K. [50] Tailoring grain boundary via Ga 2 Te 3 precipitates combined with Sb and Pb co-alloying enables a peak zT of 2.1 at 773 K in the cubic Ge 0.78 Ga 0.01 Pb 0.1 Sb 0.07 Te. [54] The excellent TE performance makes GeTe a potential system for power generation applications in the medium temperature range.…”

“…The n opt of GeTe at its operating temperature range is theoretically estimated to be 1-3 × 10 20 cm −3 (Figure 1a), using the single parabolic band (SPB) model. [59] In light of the over-high n H in the as-fabricated binary GeTe, the counter doping, using aliovalent elements, such as Bi [33,42,46,47,50,[60][61][62][63] and Sb, [27][28][29][30][31]34,[39][40][41]43,[51][52][53] is a common method for reducing the over-high n H to n opt . In addition, previous studies also found that n H can be reduced by increasing the formation energy of Ge vacancies (V Ge ) through hetero-alloying.…”